SD1898
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS
. . . . . .
1.65 GHz 28 VOLTS EFFICIENCY 40% MIN. CLASS ...
SD1898
RF & MICROWAVE
TRANSISTORS 1.6 GHz SATCOM APPLICATIONS
. . . . . .
1.65 GHz 28 VOLTS EFFICIENCY 40% MIN. CLASS C OPERATION COMMON BASE P OUT = 32 W MIN. WITH 9 dB GAIN
.400 SQ. 2LFL (M186) epoxy sealed ORDER CODE SD1898 BRANDING 1898
PIN CONNECTION
DESCRIPTION The SD1898 is a 28 V Class C silicon
NPN transistor designed for INMARSAT and other 1.65 GHz SATCOM applications. A gold metallized emitterballasted die geometry is employed providing high gain and efficiency while ensuring long term reliability and ruggedness under severe operating conditions. SD1898 is packaged in a cost-effective epoxy sealed housing. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
1. Collector 2. Base
3. Emitter 4. Base
VCBO VCEO VEBO IC PDISS TJ T STG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
45 15 3.5 7.8 87.5 +200 − 65 to +150
V V V A W °C °C
THERMAL DATA RTH(j-c)
November 1992
Junction-Case Thermal Resistance
2.0
°C/W
1/4
SD1898
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVCEO BVEBO hFE DYNAMIC
Symbol
IC = 10mA IC = 10mA IE = 10mA VCE = 5V
IE = 0mA IB = 0mA IC = 0mA IC = 2A
45 12 3.5 15
— — — —
— — — 150
V V V —
Test Conditions
Value Min . Typ. Max.
Unit
POUT GP ηc
f = 1.65 GHz f = 1.65 GHz f = 1.65 GHz
PIN = 4.0 W PIN = 4.0 W PIN = 4.0 W
VCE = 28 V VCE = 28 V VCE = 28 V
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