CGHV14800F

CGHV14800F 800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14800 ideal for 1.2 - 1.4 GHz pulsed L-Band radar amplifier applications, such as air traffic control (ATC) radar, weather radar, penetration radars, antimissile system radars, target tracking radars and long range survelliance radars. The GaN HEMT typically operates at 50 V, typically delivering >65% drain efficiency. The package options are ceramic/metal flange package. Package PN: CTGypHeV: 1444800101F7 Typical Performance Over 1.2-1.4 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 1.2 GHz 1.25 GHz 1.3 GHz 1.35 GHz Output Power 1000 940 940 920 1.4 GHz 910 Power Gain 15.5 15.2 15.2 15.1 15.1 Drain Efficiency 74 73 73 69 67 Note: Measured in the CGHV14800-AMP amplifier circuit, under 100 μs pulse width, 5% duty cycle, PIN = 44.5 dBm. Units W dB % Features Reference design amplifier 1.2 - 1.4 GHz Operation 910 W Typical Output Power 14 dB Power Gain 70% Typical Drain Efficiency <0.3 dB Pulsed Amplitude Droop Internally input and output matched Rev 2.0 – June 2017 Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature...