MA4AGP907

MA4AGP907 MA4AGFCP910 AlGaAs Flip Chip PIN Diodes Features ♦ Low Series Resistance ♦ Ultra Low Capacitance ♦ Millimeter Wave Switching & Cutoff Frequency ♦ 2 Nanosecond Switching Speed ♦ Can be Driven by a Buffered TTL ♦ Silicon Nitride Passivation ♦ Polyimide Scratch Protection ♦ RoHS Compliant V4 Chip Dimensions MA4AGP907 and MA4AGFCP910 Description M/A-COM Technology Solutions MA4AGP907 and MA4AGFCP910 are Aluminum Gallium Arsenide (AlGaAs) flip-chip PIN diodes. These devices are fabricated on OMCVD epitaxial wafers using a process optimized for high device uniformity and exceptionally low parasitics. The end result is a diode with an extremely low RC product, (0.1ps) and 2-3nS switching characteristics. They are fully passivated with silicon nitride and have an added polymer layer for scratch protection. The protective coating prevents damage to the junction and the anode air-bridge during handling and assembly. Applications The ultra low capacitance of the MA4AGP907 and MA4AGFCP910 make them ideal for RF switch and phase shifter applications through millimeter wave frequencies. The diodes are designed for use in pulsed or CW applications, where single digit nS switching speed is required. The low capacitance of these diodes make them ideal for use in microwave multi-throw switch assemblies, where the series capacitance of each “off” port adversely loads the input and affects VSWR. Absolute Maximum Ratings TAMB = +25°C (unless otherwise specified) Parameter Absolute...