6N04N009

IAUC120N04S6N009 OptiMOS™- 6 Power-Transistor Product Summary Features OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 0.9 m 120 A PG-TDSON-8 N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 1 1 100% Avalanche tested Type IAUC120N04S6N009 Package PG-TDSON-8 Marking 6N04N009 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol Conditions I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature I D,pulse T C=25°C E AS I D=60A, R G,min=25 I AS R G,min=25 V GS - P tot T C=25°C T j, T stg - Value 120 120 480 400 60 ±20 150 -55 ... +175 Unit A mJ A V W °C Rev. 1.0 page 1 2018-09-27 IAUC120N04S6N009 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA 6 cm2 cooling area3) min. Values typ. Unit max. - - 1.0 K/W - - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance2) V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V...