Document
Silicon Carbide Power Schottky Diode
CDBD2SC21200-G
Reverse Voltage: 1200V Forward Current: 2A RoHS Device
Features
- Rated to 1200V at 2 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF
Circuit diagram
C(3)
C(1) A(2)
TO-263/D2PAK
0.402(10.20) 0.394(10.00)
3
0.051(1.30) 0.043(1.10)
0.596(15.15) 0.585(14.85)
0.346(8.80) 0.339(8.60)
12
0.205(5.20) 0.197(5.00)
0.049(1.25) 0.045(1.15)
0.037(0.95) 0.033(0.85)
0.063(1.60) 0.055(1.40)
0.185(4.70) 0.177(4.50)
0.054(1.37) 0.046(1.17)
0.107(2.72) 0.091(2.32) 0.019(0.47) 0.014(0.37)
Dimensions in inches and (millimeters)
Maximum Ratings (at TA=25°C, unless otherwise noted)
Parameter
Conditions
Repetitive peak reverse voltage
Surge peak reverse voltage
DC bolcking voltage
Continuous forward current Repetitive peak forward surge current Non-repetitive peak forward surge current Power dissipation
TC = 25°C TC = 135°C TC = 155°C Tc = 25°C, tp = 10ms Half sine wave, D = 0.3
Tc = 25°C, tp = 10ms Half sine wave
TC = 25°C
TC = 110°C
Typical thermal resistance
Junction to case
Operating junction temperature range
Storage temperature range
Symbol VRRM VRSM VDC
IF
IFRM IFSM
PTOT
RθJC TJ TSTG
Value 1200 1200 1200
6.2 3.2 2 15
35
53.2 23 2.82 -55 ~ +175 -55 ~ +175
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSCXX
Comchip Technology CO., LTD.
Unit V V V
A
A A
W °C/W
°C °C
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Silicon Carbide Power Schottky Diode
Electrical Characteristics (at TA=25°C, unless otherwise noted)
Parameter
Conditions
Symbol Min.
Forward voltage Reverse current Total capacitive charge Total capacitance
IF = 2A, Tj = 25°C IF = 2A, Tj = 175°C VR = 1200V, Tj = 25°C VR = 1200V, Tj = 175°C VR = 800V, Tj = 150°C QC = ∫VR C(V) dv
0
VR = 0V, Tj = 25°C, f = 1MHZ VR = 400V, Tj = 25°C, f = 1MHZ VR = 800V, Tj = 25°C, f = 1MHZ
VF IR QC
C
Typ. 1.62 2.8 20 30
12
136 12 11
Max. 1.7 3 100 200
150 13 12
Unit V μA nC
pF
RATING AND CHARACTERISTIC CURVES (CDBD2SC21200-G)
Forward Current, IF (A)
TJ=25°C TJ=75°C TJ=125°C T J=175°C
Reverse Current, IR (mA)
Fig.1 - Forward Characteristics
3.5 3.0 2.5 2.0 1.5 1.0 0.5
0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Forward Voltage, VF (V)
Fig.2 - Reverse Characteristics
0.014
0.012
0.010 0.008 0.006
TJ=25°C TJ=75°C TJ=125°C TJ=175°C
0.004
0.002
0 0 200 400 600 800 1000 1200 1400 Reverse Voltage, VR (V)
Forward Current, IF (A) Capacitance Between Terminals, CJ (pF)
22 20 18 16 14 12 10
8 6 4 2 0
25
Fig.3 - Current Derating
10% Duty 30% Duty
50% Duty
70% Duty DC
50 75 100 125 150
Case Tempature, TC (°C)
175
Fig.4 - Capacitance VS. Reverse Voltage
160
140
120
100
80
60
40
20
0
0.01
0.1
1
10 100 1000
Reverse Voltage, VR (V)
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSCXX
Comchip Technology CO., LTD.
REV: Page 2
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