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CDBD2SC21200-G Dataheets PDF



Part Number CDBD2SC21200-G
Manufacturers Comchip
Logo Comchip
Description Silicon Carbide Power Schottky Diode
Datasheet CDBD2SC21200-G DatasheetCDBD2SC21200-G Datasheet (PDF)

Silicon Carbide Power Schottky Diode CDBD2SC21200-G Reverse Voltage: 1200V Forward Current: 2A RoHS Device Features - Rated to 1200V at 2 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF Circuit diagram C(3) C(1) A(2) TO-263/D2PAK 0.402(10.20) 0.394(10.00) 3 0.051(1.30) 0.043(1.10) 0.596(15.15) 0.585(14.85) 0.346(8.80) 0.339(8.60) 12 0.

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Silicon Carbide Power Schottky Diode CDBD2SC21200-G Reverse Voltage: 1200V Forward Current: 2A RoHS Device Features - Rated to 1200V at 2 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF Circuit diagram C(3) C(1) A(2) TO-263/D2PAK 0.402(10.20) 0.394(10.00) 3 0.051(1.30) 0.043(1.10) 0.596(15.15) 0.585(14.85) 0.346(8.80) 0.339(8.60) 12 0.205(5.20) 0.197(5.00) 0.049(1.25) 0.045(1.15) 0.037(0.95) 0.033(0.85) 0.063(1.60) 0.055(1.40) 0.185(4.70) 0.177(4.50) 0.054(1.37) 0.046(1.17) 0.107(2.72) 0.091(2.32) 0.019(0.47) 0.014(0.37) Dimensions in inches and (millimeters) Maximum Ratings (at TA=25°C, unless otherwise noted) Parameter Conditions Repetitive peak reverse voltage Surge peak reverse voltage DC bolcking voltage Continuous forward current Repetitive peak forward surge current Non-repetitive peak forward surge current Power dissipation TC = 25°C TC = 135°C TC = 155°C Tc = 25°C, tp = 10ms Half sine wave, D = 0.3 Tc = 25°C, tp = 10ms Half sine wave TC = 25°C TC = 110°C Typical thermal resistance Junction to case Operating junction temperature range Storage temperature range Symbol VRRM VRSM VDC IF IFRM IFSM PTOT RθJC TJ TSTG Value 1200 1200 1200 6.2 3.2 2 15 35 53.2 23 2.82 -55 ~ +175 -55 ~ +175 Company reserves the right to improve product design , functions and reliability without notice. QW-BSCXX Comchip Technology CO., LTD. Unit V V V A A A W °C/W °C °C REV: Page 1 Silicon Carbide Power Schottky Diode Electrical Characteristics (at TA=25°C, unless otherwise noted) Parameter Conditions Symbol Min. Forward voltage Reverse current Total capacitive charge Total capacitance IF = 2A, Tj = 25°C IF = 2A, Tj = 175°C VR = 1200V, Tj = 25°C VR = 1200V, Tj = 175°C VR = 800V, Tj = 150°C QC = ∫VR C(V) dv 0 VR = 0V, Tj = 25°C, f = 1MHZ VR = 400V, Tj = 25°C, f = 1MHZ VR = 800V, Tj = 25°C, f = 1MHZ VF IR QC C Typ. 1.62 2.8 20 30 12 136 12 11 Max. 1.7 3 100 200 150 13 12 Unit V μA nC pF RATING AND CHARACTERISTIC CURVES (CDBD2SC21200-G) Forward Current, IF (A) TJ=25°C TJ=75°C TJ=125°C T J=175°C Reverse Current, IR (mA) Fig.1 - Forward Characteristics 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Forward Voltage, VF (V) Fig.2 - Reverse Characteristics 0.014 0.012 0.010 0.008 0.006 TJ=25°C TJ=75°C TJ=125°C TJ=175°C 0.004 0.002 0 0 200 400 600 800 1000 1200 1400 Reverse Voltage, VR (V) Forward Current, IF (A) Capacitance Between Terminals, CJ (pF) 22 20 18 16 14 12 10 8 6 4 2 0 25 Fig.3 - Current Derating 10% Duty 30% Duty 50% Duty 70% Duty DC 50 75 100 125 150 Case Tempature, TC (°C) 175 Fig.4 - Capacitance VS. Reverse Voltage 160 140 120 100 80 60 40 20 0 0.01 0.1 1 10 100 1000 Reverse Voltage, VR (V) Company reserves the right to improve product design , functions and reliability without notice. QW-BSCXX Comchip Technology CO., LTD. REV: Page 2 .


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