CDBDSC10650-G

Silicon Carbide Power Schottky Diode CDBDSC10650-G Reverse Voltage: 650 V Forward Current: 10 A RoHS Device Features - Rated to 650V at 10 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF Circuit Diagram C(3) C(1) A(2) 0.409(10.40) 0.394(10.00) 0.244(6.20) 0.236(6.00) D-PAK(TO-252) 0.264(6.70) 0.256(6.50) 0.215(5.46) 0.201(5.10) 3 Φ 0.051(1.30) 0.043(1.10) 12 0.023(0.58) 0.018(0.46) 0.012(0.30) Max. 0.091(2.32) 0.089(2.28) 0.093(2.37) 0.085(2.16) 0.034(0.86) 0.026(0.66) 0.090(2.29) 0.035(0.89) 0.114(2.90) 0.100(2.55) 0.023(0.58) 0.016(0.43) Dimensions in inches and (millimeters) Maximum Ratings (at TA=25°C, unless otherwise noted) Parameter Conditions Symbol Repetitive peak reverse voltage VRRM Surge peak reverse voltage VRSM DC bolcking voltage Continuous forward current Repetitive peak forward surge cruuent Non-repetitive peak forward surge current TC = 25°C TC = 135°C TC = 150°C Tc = 25°C, tp = 10ms Half sine wave, D = 0.3 Tc = 25°C, tp = 10ms Half sine wave VDC IF IFRM IFSM Power dissipation TC = 25°C TC = 110°C PTOT Typical thermal resistance Junction to case RθJC Operating junction temperature range TJ Storage temperature range TSTG Value 650 650 650 33 15 10 50 100 109 48 1.37 -55 ~ +175 -55 ~ +175 Company reserves the right to improve product design , functions and reliability w...