Silicon Carbide Power Schottky Diode
CDBJFSC3650-G
Reverse Voltage: 650 V Forward Current: 3 A RoHS Device
Features
- R...
Silicon Carbide Power
Schottky Diode
CDBJFSC3650-G
Reverse Voltage: 650 V Forward Current: 3 A RoHS Device
Features
- Rated to 650V at 3 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF.
Circuit diagram
K(3)
K(1) A(2)
TO-220F
0.404(10.25) 0.388( 9.85)
0.130(3.30) 0.118(3.00)
0.112(2.85) 0.100(2.55)
0.264(6.70) 0.248(6.30)
0.039(1.00) 0.024(0.60)
0.055(1.40) 0.043(1.10)
0.031(0.80) 0.020(0.50)
0.602(15.30) 0.587(14.90)
0.154(3.90) 0.130(3.30)
0.539(13.70) 0.516(13.10)
0.201(5.10)
0.100(2.55)
0.126(3.20) 0.118(3.00)
0.185(4.70) 0.173(4.40)
0.110(2.80) 0.098(2.50)
0.031(0.80) 0.020(0.50)
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25°C unless otherwise noted)
Parameter Repetitive peak reverse voltage Surge peak reverse voltage DC blocking voltage Typical continuous forward current Repetitive peak forward surge current Non-repetitive peak forward surge current
Power dissipation
Typical thermal resistance Operating junction temperature range Storage temperature range
Conditions
TC = 150°C Tc = 25°C, tp = 10ms Half sine wave, D = 0.3 Tc = 25°C, tp = 10ms Half sine wave Tc = 25°C Tc = 110°C Junction to case
Symbol VRRM VRSM VDC IF IFRM IFSM
PTOT
RθJC TJ TSTG
Value 650 650 650 3 15
30 53.2 23 7.83 -55 ~ +175 -55 ~ +175
Company reserves the right to improve product design , functions and reliabi...