CDBJSC3650-G

Silicon Carbide Power Schottky Diode CDBJSC3650-G Reverse Voltage: 650 V Forward Current: 3 A RoHS Device Features - Rated to 650V at 3 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF. Circuit diagram K(3) K(1) A(2) TO-220-2 0.116(2.95) 0.104(2.65) 0.409(10.40) 0.394(10.00) 0.311(7.90) 0.303(7.70) 0.152(3.85) 0.148(3.75) 0.646(16.40) Max. 0.620(15.75) 0.600(15.25) 0.181(4.60) 0.173(4.40) 0.052(1.32) 0.048(1.23) 0.260(6.60) 0.244(6.20) 0.067(1.70) 0.045(1.14) 0.155(3.93) 0.138(3.50) 0.551(14.00) 0.512(13.00) 0.107(2.72) 0.094(2.40) 0.035(0.88) 0.024(0.61) 0.203(5.15) 0.195(4.95) 0.028(0.70) 0.019(0.49) Dimensions in inches and (millimeter) Maximum Rating (at TA=25°C unless otherwise noted) Parameter Conditions Repetitive peak reverse voltage Surge peak reverse voltage DC bolcking voltage Typical Continuous forward current Repetitive peak forward surge current Non-repetitive peak forward surge current Power dissipation Tc = 150°C Tc = 25°C, tp = 10ms Half sine wave, D = 0.3 Tc = 25°C, tp = 10ms Half sine wave Tc = 25°C Tc = 110°C Typical thermal resistance Junction to case Operating junction temperature range Storage temperature range Symbol VRRM VRSM VDC IF IFRM IFSM PTOT RθJC TJ TSTG Value 650 650 650 3 15 30 53.2 23 2.82 -55 ~ +175 -55 ~ +175 Unit V V V A A A W °C/W °C °C Company reser...