CDBGBSC101200-G

Dual Silicon Carbide Power Schottky Diode CDBGBSC101200-G Reverse Voltage: 1200V Forward Current: 10A RoHS Device Features - Rated to 1200 at 10 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF Circuit diagram C(4) A(1) A(3) C(2) 0.244(6.20) 0.213(5.40) 0.845(21.46) 0.819(20.80) TO-247 0.640(16.26) 0.620(15.75) 4 0.209(5.30) 0.185(4.70) 0.144(3.65) 0.140(3.55) 0.216(5.49) 0.170(4.32) 1 23 0.177(4.50) MAX. 0.800(20.32) 0.780(19.81) 0.084(2.13) 0.065(1.65) 0.433(11.00) 0.425(10.80) 0.055(1.40) 0.039(1.00) Dimensions in inches and (millimeter) 0.031(0.80) 0.016(0.40) 0.098(2.49) 0.059(1.50) Maximum Ratings (at TA=25°C, unless otherwise noted) Parameter Conditions Repetitive peak reverse voltage Surge peak reverse voltage DC bolcking voltage Continuous forward current Repetitive peak forward surge current Non-repetitive peak forward surge current Power dissipation Typical thermal resistance from junction to case TC = 25°C (Per leg) TC = 135°C (Per leg) TC = 155°C (Per leg) Tc = 25°C, tp = 10ms Half sine wave, D = 0.3 (Per leg) Tc = 25°C, tp = 10ms Half sine wave (Per leg) TC = 25°C (Per leg) TC = 110°C (Per leg) Per leg Per diode Operating junction temperature range Storage temperature range Symbol VRRM VRSM VDC IF IFRM IFSM PTOT RθJC RθJC TJ TSTG Value 1200 1200 1200 18 8 5 25 50 109.5 47 1.37 0.69 -...