Silicon Carbide Power Schottky Diode
CDBJSC101200-G
Reverse Voltage: 1200 V Forward Current: 10 A RoHS Device
Features
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Silicon Carbide Power
Schottky Diode
CDBJSC101200-G
Reverse Voltage: 1200 V Forward Current: 10 A RoHS Device
Features
- Rated to 1200V at 10 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF.
Circuit diagram
K(3)
K(1) A(2)
TO-220-2
0.116(2.95) 0.104(2.65)
0.409(10.40) 0.394(10.00)
0.311(7.90) 0.303(7.70)
0.152(3.85) 0.148(3.75)
0.646(16.40) Max.
0.620(15.75) 0.600(15.25)
0.181(4.60) 0.173(4.40)
0.052(1.32) 0.048(1.23)
0.260(6.60) 0.244(6.20)
0.067(1.70) 0.045(1.14)
0.155(3.93) 0.138(3.50)
0.551(14.00) 0.512(13.00)
0.107(2.72) 0.094(2.40)
0.035(0.88) 0.024(0.61)
0.203(5.15) 0.195(4.95)
0.028(0.70) 0.019(0.49)
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Repetitive peak reverse voltage
Surge peak reverse voltage
DC blocking voltage
Typical continuous forward current Repetitive peak forward surge current Non-repetitive peak forward surge current
Power dissipation
Tc = 150°C
Tc = 25°C, tp = 10ms Half sine wave, D = 0.3 Tc = 25°C, tp = 10ms Half sine wave
TC = 25°C
TC = 110°C
Typical thermal resistance
Junction to case
Operating junction temperature range
Storage temperature range
VRRM VRSM VDC
IF IFRM IFSM
PTOT
RθJC TJ TSTG
Value
1200 1200 1200
10 50 100 141.5 62 1.06 -55 ~ +175 -55 ~ +175
Company reserves the right to i...