CDBJSC101200-G

Silicon Carbide Power Schottky Diode CDBJSC101200-G Reverse Voltage: 1200 V Forward Current: 10 A RoHS Device Features - Rated to 1200V at 10 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF. Circuit diagram K(3) K(1) A(2) TO-220-2 0.116(2.95) 0.104(2.65) 0.409(10.40) 0.394(10.00) 0.311(7.90) 0.303(7.70) 0.152(3.85) 0.148(3.75) 0.646(16.40) Max. 0.620(15.75) 0.600(15.25) 0.181(4.60) 0.173(4.40) 0.052(1.32) 0.048(1.23) 0.260(6.60) 0.244(6.20) 0.067(1.70) 0.045(1.14) 0.155(3.93) 0.138(3.50) 0.551(14.00) 0.512(13.00) 0.107(2.72) 0.094(2.40) 0.035(0.88) 0.024(0.61) 0.203(5.15) 0.195(4.95) 0.028(0.70) 0.019(0.49) Dimensions in inches and (millimeter) Maximum Rating (at TA=25°C unless otherwise noted) Parameter Conditions Symbol Repetitive peak reverse voltage Surge peak reverse voltage DC blocking voltage Typical continuous forward current Repetitive peak forward surge current Non-repetitive peak forward surge current Power dissipation Tc = 150°C Tc = 25°C, tp = 10ms Half sine wave, D = 0.3 Tc = 25°C, tp = 10ms Half sine wave TC = 25°C TC = 110°C Typical thermal resistance Junction to case Operating junction temperature range Storage temperature range VRRM VRSM VDC IF IFRM IFSM PTOT RθJC TJ TSTG Value 1200 1200 1200 10 50 100 141.5 62 1.06 -55 ~ +175 -55 ~ +175 Company reserves the right to i...