MOSFET. 80R4K5P7 Datasheet

80R4K5P7 Datasheet PDF, Equivalent


Part Number

80R4K5P7

Description

MOSFET

Manufacture

Infineon

Total Page 13 Pages
PDF Download
Download 80R4K5P7 Datasheet


80R4K5P7 Datasheet
IPD80R4K5P7
MOSFET
800VCoolMOSªP7PowerTransistor
Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V
superjunctiontechnologiesandcombinesbest-in-classperformancewith
stateoftheartease-of-use,resultingfromInfineon’sover18years
pioneeringsuperjunctiontechnologyinnovation.
Features
•Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss
•Best-in-classDPAKRDS(on)
•Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V
•IntegratedZenerDiodeESDprotection
•Fullyqualifiedacc.JEDECforIndustrialApplications
•Fullyoptimizedportfolio
Benefits
•Best-in-classperformance
•Enablinghigherpowerdensitydesigns,BOMsavingsandlower
assemblycosts
•Easytodriveandtoparallel
•BetterproductionyieldbyreducingESDrelatedfailures
•Lessproductionissuesandreducedfieldreturns
•Easytoselectrightpartsforfinetuningofdesigns
Potentialapplications
RecommendedforhardandsoftswitchingflybacktopologiesforLED
Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand
Industrialpower.AlsosuitableforPFCstageinConsumerapplications
andSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C
800
V
RDS(on),max
4.5
Qg,typ
4
nC
ID 1.5 A
Eoss @ 500V
0.4
µJ
VGS(th),typ
3
V
ESD class (HBM) 1C
-
Type/OrderingCode
IPD80R4K5P7
Package
PG-TO 252-3
Marking
80R4K5P7
DPAK
tab
2
1
3
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.1,2018-02-09

80R4K5P7 Datasheet
800VCoolMOSªP7PowerTransistor
IPD80R4K5P7
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2 Rev.2.1,2018-02-09


Features Datasheet pdf IPD80R4K5P7 MOSFET 800VCoolMOSªP7Po werTransistor Thelatest800VCoolMOS P7seriessetsanewbenchmarkin80 0V superjunctiontechnologiesandcomb inesbest-in-classperformancewith sta teoftheartease-of-use,resultingfr omInfineon’sover18years pioneerin gsuperjunctiontechnologyinnovation. Features •Best-in-classFOMRDS(on) *Eoss;reducedQg,Ciss,andCoss • Best-in-classDPAKRDS(on) •Best-in -classV(GS)thof3VandsmallestV(GS )thvariationof±0.5V •Integrated ZenerDiodeESDprotection •Fullyqu alifiedacc.JEDECforIndustrialAppli cations •Fullyoptimizedportfolio B enefits •Best-in-classperformance Enablinghigherpowerdensitydesign s,BOMsavingsandlower assemblycosts •Easytodriveandtoparallel • BetterproductionyieldbyreducingESD relatedfailures •Lessproductioni ssuesandreducedfieldreturns •Eas ytoselectrightpartsforfinetuning ofdesigns Potentialapplications Recommendedforhardandsoftswitchingflybacktopologies.
Keywords 80R4K5P7, datasheet, pdf, Infineon, MOSFET, 0R4K5P7, R4K5P7, 4K5P7, 80R4K5P, 80R4K5, 80R4K, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)