60S2K1

IPN60R2K1CE MOSFET 600VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. Features ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pb-freeplating,Halogenfreemoldcompound Qualifiedforstandardgradeapplications Applications Adapter,ChargerandLighting Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max RDS(on),max Qg,typ ID,pulse Eoss@400V Body diode di/dt 650 2.1 6.7 5.9 0.76 500 V Ω nC A µJ A/µs Type/OrderingCode IPN60R2K1CE Package PG-SOT223 Marking 60S2K1 PG-SOT223 Gate Pin 1 Drain Pin 2 Source Pin 3 RelatedLinks see Appendix A Final Data Sheet 1 Rev.2.0,2016-04-29 600VCoolMOSªCEPowerTransistor IPN60R2K1CE TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...