60S2K1 Datasheet: MOSFET





60S2K1 MOSFET Datasheet

Part Number 60S2K1
Description MOSFET
Manufacture Infineon
Total Page 13 Pages
PDF Download Download 60S2K1 Datasheet PDF

Features: IPN60R2K1CE MOSFET 600VCoolMOSªCEPo werTransistor CoolMOS™isarevoluti onarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesup erjunction(SJ)principleand pioneered byInfineonTechnologies.CoolMOS™C Eisa price-performanceoptimizedplat formenablingtotargetcostsensitive applicationsinConsumerandLightingm arketsbystillmeetinghighest efficie ncystandards.Thenewseriesprovides allbenefitsofafast switchingSuperj unctionMOSFETwhilenotsacrificingea seofuseand offeringthebestcostdo wnperformanceratioavailableonthem arket. Features •Extremelylowlosse sduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness Easytouse/drive •Pb-freeplatin g,Halogenfreemoldcompound •Quali fiedforstandardgradeapplications Ap plications Adapter,ChargerandLightin g Pleasenote:ForMOSFETparallelingt heuseofferritebeadsonthegate or seperatetotempolesisgenerallyrecommended. Table1KeyPerformancePa.

Keywords: 60S2K1, datasheet, pdf, Infineon, MOSFET, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

IPN60R2K1CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
Adapter,ChargerandLighting
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Qg,typ
ID,pulse
Eoss@400V
Body diode di/dt
650
2.1
6.7
5.9
0.76
500
V
nC
A
µJ
A/µs
Type/OrderingCode
IPN60R2K1CE
Package
PG-SOT223
Marking
60S2K1
PG-SOT223
Gate
Pin 1
Drain
Pin 2
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-04-29

                    
                 






Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)