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EPC2111 Dataheets PDF



Part Number EPC2111
Manufacturers EPC
Logo EPC
Description Enhancement-Mode GaN Power Transistor Half-Bridge
Datasheet EPC2111 DatasheetEPC2111 Datasheet (PDF)

eGaN® FET DATASHEET EPC2111 – Enhancement-Mode GaN Power Transistor Half-Bridge VDS , 30 V RDS(on) , 19 mΩ (Q1), 8 mΩ (Q2) ID , 16 A (Q1), 16 A (Q2) EPC2111 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and l.

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eGaN® FET DATASHEET EPC2111 – Enhancement-Mode GaN Power Transistor Half-Bridge VDS , 30 V RDS(on) , 19 mΩ (Q1), 8 mΩ (Q2) ID , 16 A (Q1), 16 A (Q2) EPC2111 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. DEVICE Q1 Q2 Maximum Ratings PARAMETER Drain-to-Source Voltage (Continuous) VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) ID Continuous (TA = 25°C, RθJA = 15°C/W) Pulsed (25°C, TPULSE = 300 µs) VGS Gate-to-Source Voltage Gate-to-Source Voltage TJ Operating Temperature TSTG Storage Temperature VDS Drain-to-Source Voltage (Continuous) Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) ID Continuous (TA = 25°C, RθJA = 36°C/W) Pulsed (25°C, TPULSE = 300 µs) VGS Gate-to-Source Voltage Gate-to-Source Voltage TJ Operating Temperature TSTG Storage Temperature VALUE 30 36 16 50 6 -4 –40 to 150 –40 to 150 30 36 16 140 6 -4 –40 to 150 –40 to 150 UNIT V A V °C V A V °C Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 1.3 RθJB Thermal Resistance, Junction-to-Board 6.6 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 58 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details EPC2111 eGaN® ICs are supplied only in passivated die form with solder bumps Die Size: 3.5 mm x 1.5 mm Applications • High Frequency DC-DC • Point-of-Load (POL) Converters Benefits • High Frequency Operation (up to 10 MHz) • Low Inductance Package • High Density Footprint EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 | |1 eGaN® FET DATASHEET EPC2111 DEVICE Q1 Q2 BVDSS IDSS IGSS VGS(TH) RDS(on) VSD BVDSS IDSS IGSS VGS(TH) RDS(on) VSD Static Characteristics PARAMETER TEST CONDITIONS Drain-to-Source Voltage VGS = 0 V, ID = 0.25 mA Drain-Source Leakage VDS = 24 V, VGS = 0 V Gate-to-Source Forward Leakage VGS = 5 V Gate-to-Source Reverse Leakage VGS = -4 V Gate Threshold Voltage VDS = VGS, ID = 2 mA Drain-Source On Resistance VGS = 5 V, ID = 15 A Source-Drain Forward Voltage IS = 0.5 A, VGS = 0 V Drain-to-Source Voltage VGS = 0 V, ID = 0.4 mA Drain-Source Leakage VDS = 24 V, VGS = 0 V Gate-to-Source Forward Leakage VGS = 5 V Gate-to-Source Reverse Leakage VGS = -4 V Gate Threshold Voltage VDS = VGS, ID = 5 mA Drain-Source On Resistance VGS = 5 V, ID = 15 A Source-Drain Forward Voltage IS = 0.5 A, VGS = 0 V MIN TYP 30 0.002 0.004 0.002 0.8 1.4 14 1.8 30 0.005 0.01 0.005 0.8 1.4 6 1.8 MAX.


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