Document
eGaN® FET DATASHEET
EPC2111 – Enhancement-Mode GaN Power Transistor Half-Bridge
VDS , 30 V RDS(on) , 19 mΩ (Q1), 8 mΩ (Q2) ID , 16 A (Q1), 16 A (Q2)
EPC2111
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very
low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
DEVICE Q1
Q2
Maximum Ratings
PARAMETER
Drain-to-Source Voltage (Continuous) VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C)
ID
Continuous (TA = 25°C, RθJA = 15°C/W) Pulsed (25°C, TPULSE = 300 µs)
VGS
Gate-to-Source Voltage Gate-to-Source Voltage
TJ Operating Temperature
TSTG Storage Temperature
VDS
Drain-to-Source Voltage (Continuous) Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C)
ID
Continuous (TA = 25°C, RθJA = 36°C/W) Pulsed (25°C, TPULSE = 300 µs)
VGS
Gate-to-Source Voltage Gate-to-Source Voltage
TJ Operating Temperature TSTG Storage Temperature
VALUE 30 36 16 50 6 -4
–40 to 150 –40 to 150
30 36 16 140 6 -4 –40 to 150 –40 to 150
UNIT V A V °C V A V °C
Thermal Characteristics
PARAMETER
TYP UNIT
RθJC Thermal Resistance, Junction-to-Case
1.3
RθJB Thermal Resistance, Junction-to-Board
6.6 °C/W
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
58
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details
EPC2111 eGaN® ICs are supplied only in passivated die form with solder bumps Die Size: 3.5 mm x 1.5 mm
Applications • High Frequency DC-DC • Point-of-Load (POL) Converters
Benefits • High Frequency Operation (up to 10 MHz)
• Low Inductance Package
• High Density Footprint
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 |
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eGaN® FET DATASHEET
EPC2111
DEVICE Q1
Q2
BVDSS IDSS
IGSS
VGS(TH) RDS(on) VSD BVDSS IDSS
IGSS
VGS(TH) RDS(on) VSD
Static Characteristics
PARAMETER
TEST CONDITIONS
Drain-to-Source Voltage
VGS = 0 V, ID = 0.25 mA
Drain-Source Leakage
VDS = 24 V, VGS = 0 V
Gate-to-Source Forward Leakage
VGS = 5 V
Gate-to-Source Reverse Leakage
VGS = -4 V
Gate Threshold Voltage
VDS = VGS, ID = 2 mA
Drain-Source On Resistance
VGS = 5 V, ID = 15 A
Source-Drain Forward Voltage
IS = 0.5 A, VGS = 0 V
Drain-to-Source Voltage
VGS = 0 V, ID = 0.4 mA
Drain-Source Leakage
VDS = 24 V, VGS = 0 V
Gate-to-Source Forward Leakage
VGS = 5 V
Gate-to-Source Reverse Leakage
VGS = -4 V
Gate Threshold Voltage
VDS = VGS, ID = 5 mA
Drain-Source On Resistance
VGS = 5 V, ID = 15 A
Source-Drain Forward Voltage
IS = 0.5 A, VGS = 0 V
MIN TYP 30
0.002 0.004 0.002 0.8 1.4
14 1.8 30 0.005 0.01 0.005 0.8 1.4 6 1.8
MAX.