2SJ160

2SJ160, 2SJ161, 2SJ162 Silicon P Channel MOS FET Description Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 G D S REJ03G0847-0200 (Previous: ADE-208-1182) Rev.2.00 Sep 07, 2005 1. Gate 2. Source (Flange) 3. Drain Rev.2.00 Sep 07, 2005 page 1 of 5 2SJ160, 2SJ161, 2SJ162 Absolute Maximum Ratings Item Drain to source voltage 2SJ160 2SJ161 2SJ162 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VDSX VGSS ID IDR Pch Note 1 Tch Tstg Value –120 –140 –160 ±15 –7 –7 100 150 –55 to +150 (Ta = 25°C) Unit V V A A W °C °C Electrical Characteristics Item Drain to source breakdown voltage 2SJ160 2SJ161 2SJ162 Gate to source breakdown voltage Gate to source cutoff voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Note: 2. Pulse test (Ta = 25°C) Symbol Min Typ Max Unit Test Conditions V (BR) DSX –120 –140 — — — — V ID = –10 mA, VGS = 10 V V –160 — — V V (BR) GSS ±15 — — V IG = ±...