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MJE13003 Dataheets PDF



Part Number MJE13003
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description SILICON NPN POWER TRANSISTOR
Datasheet MJE13003 DatasheetMJE13003 Datasheet (PDF)

MJE13003 SILICON NPN POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE13003 is a silicon NPN power transistor designed for high speed power switching applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Collector-Emitter Voltage VCEO Collector-Emitter Voltage VCEV Emitter-Base Voltage VEBO Continuous Collector Current IC Peak Collector Current ICM Continuous Base Current IB Peak.

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MJE13003 SILICON NPN POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE13003 is a silicon NPN power transistor designed for high speed power switching applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Collector-Emitter Voltage VCEO Collector-Emitter Voltage VCEV Emitter-Base Voltage VEBO Continuous Collector Current IC Peak Collector Current ICM Continuous Base Current IB Peak Base Current IBM Continuous Emitter Current IE Peak Emitter Current IEM Power Dissipation PD Power Dissipation (TA=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJA Thermal Resistance ΘJC 400 700 9.0 1.5 3.0 0.75 1.5 2.25 4.5 40 1.4 -65 to +150 89.0 3.12 UNITS V V V A A A A A A W W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICEV VCE=700V, VBE(OFF)=1.5V ICEV VCE=700V, VBE(OFF)=1.5V, TC=100°C IEBO VEB=9.0V BVCEO IC=10mA 400 VCE(SAT) IC=0.5A, IB=0.1A VCE(SAT) IC=1.0A, IB=0.25A VCE(SAT) IC=1.5A, IB=0.5A VBE(SAT) IC=0.5A, IB=0.1A VBE(SAT) IC=1.0A, IB=0.25A hFE VCE=2.0V, IC=0.5A 8.0 hFE VCE=2.0V, IC=1.0A 5.0 fT VCE=10V, IC=100mA, f=1.0MHz 4.0 Cob VCB=10V, IE=0, f=100kHz 40 MAX 1.0 5.0 1.0 0.5 1.0 3.0 1.0 1.2 40 25 UNITS mA mA mA V V V V V V MHz pF R1 (23-October 2013) MJE13003 SILICON NPN POWER TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP MAX td Resistive Load 0.1 tr VCC=125V, IC=1.0A, IB1=IB2=0.2A 1.0 ts tp=25μs, Duty Cycle < 1.0% 4.0 tf 0.7 tsv Inductive Load tc IC=1.0A, Vclamp=300V, IB1=0.2A tfi VBE(off)=5.0V, TC=100°C 0.15 4.0 0.75 TO-126 CASE - MECHANICAL OUTLINE UNITS μs μs μs μs μs μs μs w w w. c e n t r a l s e m i . c o m LEAD CODE: 1) Base 2) Collector 3) Emitter MARKING: FULL PART NUMBER R1 (23-October 2013) OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central’s applications engineering team is ready to discuss your design challenges. Just ask. • Free quick ship samples (2nd day air) • Special wafer diffusions • Online technical data and parametric search • PbSn plating options • SPICE models • Package details • Custom electrical curves • Application notes • Environmental regulation compliance • Application and design sample kits • Customer specific screening • Custom product and package development • Up-screening capabilities REQUESTING PRODUCT PLATING 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). 2. If req.


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