MJE13003

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification MJE13003 DESCRIPTION ·With TO-126 package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TC=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current (DC) ICM Collector current-Peak IB Base current IBM Base current-Peak IE Emitter current IEM Emitter current-Peak PD Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector Ta=25 TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-C Thermal resistance from junction to case VALUE 700 400 9 1.5 3 0.75 1.5 2.25 4.5 1.4 40 150 -65~150 UNIT V V V A A A A A A W MAX 3.12 UNIT /W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification MJE13003 CHARACTERISTICS Tj=25 unles otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=10mA ;IB=0 400 V VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage IC=0.5A; IB=0.1A IC=1A; IB=0.25A TC=100 IC=1.5A;IB=0.5A 0.5 V...