SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1100, TPS1100Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
D Low rDS(on) . . . 0.18 Ω Typ at VGS = – 10 V D 3 V Compat...
Description
TPS1100, TPS1100Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
D Low rDS(on) . . . 0.18 Ω Typ at VGS = – 10 V D 3 V Compatible D Requires No External VCC D TTL and CMOS Compatible Inputs D VGS(th) = – 1.5 V Max D Available in Ultrathin TSSOP Package (PW) D ESD Protection Up to 2 kV Per
MIL-STD-883C, Method 3015
description
The TPS1100 is a single P-channel enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of Texas Instruments LinBiCMOS™ process. With a maximum VGS(th) of – 1.5 V and an IDSS of only 0.5 µA, the TPS1100 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDS(on) and excellent ac characteristics (rise time 10 ns typical) make the TPS1100 the logical choice for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers.
The ultrathin thin shrink small-outline package or TSSOP (PW) version with its smaller footprint and reduction in height fits in places where other P-channel MOSFETs cannot. The size advantage is especially important where board real estate is at a premium and height restrictions do not allow for a small-outline integrated circuit (SOIC) package.
SLVS078C – DECEMBER 1993 – REVISED AUGUST 1995
D OR PW PACKAGE (TOP VIEW)
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D PACKAGE
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schematic...
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