TPS1101Y

TPS1101, TPS1101Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS D Low rDS(on) . . . 0.09 Ω Typ at VGS = – 10 V D 3 V Compatible D Requires No External VCC D TTL and CMOS Compatible Inputs D VGS(th) = – 1.5 V Max D Available in Ultrathin TSSOP Package (PW) D ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995 D PACKAGE (TOP VIEW) SOURCE SOURCE SOURCE GATE 1 2 3 4 8 DRAIN 7 DRAIN 6 DRAIN 5 DRAIN D PACKAGE description The TPS1101 is a single, low-rDS(on), P-channel, enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution PW PACKAGE in battery-powered systems by means of the Texas Instruments LinBiCMOS™ process. With a maximum VGS(th) of – 1.5 V and an IDSS of only 0.5 µA, the TPS1101 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDS(on) and excellent ac characteristics (rise time 5.5 ns typical) of the TPS1101 make it the logical choice for PW PACKAGE (TOP VIEW) low-voltage switching applications such as power NC 1 16 NC switches for pulse-width-modulated (PWM) SOURCE 2 15 DRAIN controllers or motor/bridge drivers. SOURCE 3 14 DRAIN The ultrathin thin shrink small-outline package or TSSOP (PW) version fits in height-restricted places where other P-channel MOSFETs cannot. The size advantage is especially important where board height restrictions do not allow for an SOURCE SOURC...