RQ3E100MN

NotNeRewcDoemsimgennsded for RQ3E100MN Nch 30V 10A Power MOSFET Datasheet VDSS RDS(on) at 10V (Max.) RDS(on) at 4.5V (Max.) ID PD 30V 12.3mW 16.8mW 10A 2.0W lFeatures 1) Low on - resistance. 2) High Power Small Mold Package (HSMT8). 3) Pb-free lead plating ; RoHS compliant 4) Halogen Free 5) 100% Rg and UIS Tested lOutline HSMT8 lInner circuit (1) Source (2) Source (3) Source (4) Gate (5) Drain (6) Drain (7) Drain (8) Drain *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Taping lApplication DC/DC converters Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) 330 12 3,000 Taping code TB1 Marking E100MN lAbsolute maximum ratings(Ta = 25°C) ,unless otherwise specified Parameter Symbol Value Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature VDSS ID *1 ID,pulse *2 VGSS PD *3 Tj 30 10 40 20 2.0 150 Range of storage temperature Tstg -55 to +150 Unit V A A V W °C °C www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1/10 2013.02 - Rev.A NotNeRewcDoemsimgennsded for RQ3E100MN lThermal resistance Parameter Thermal resistance, junction - ambient Data Sheet Symbol RthJA *3 RthJC Values Min. Typ. Max. Unit - - 62.5 °C/W - - - °C/W lElectrical characteristics(Ta = 25°C) ,unless otherwise specified Parameter Symbol Conditions Min. Values Typ. Max. Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 30 - - ...