Power MOSFET
HS8K11
30V Nch+Nch Power MOSFET
Symbol VDSS
RDS(on)(Max.) ID PD
Tr1:Nch Tr2:Nch 30V 30V
17.9mΩ 13.3mΩ ±7A ±11A 2.0W
...
Description
HS8K11
30V Nch+Nch Power MOSFET
Symbol VDSS
RDS(on)(Max.) ID PD
Tr1:Nch Tr2:Nch 30V 30V
17.9mΩ 13.3mΩ ±7A ±11A 2.0W
lFeatures
1) Low on - resistance 2) Pb-free lead plating ; RoHS compliant 3) Halogen Free
lOutline
HSML3030L10
lInner circuit
Datasheet
lPackaging specifications Packing
Embossed Tape
lApplication
Reel size (mm)
180
Switching
Type Tape width (mm) Quantity (pcs)
8.0 3000
Taping code
TB
Marking
HS8K11
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value Tr1:Nch Tr2:Nch
Unit
Drain - Source voltage
VDSS
30 30
V
Continuous drain current
ID
±7 ±11
A
Pulsed drain current
IDP*1
±28 ±44
A
Gate - Source voltage
VGSS
±20 ±12
V
Avalanche current, single pulse
IAS*2
7.0 11
A
Avalanche energy, single pulse
EAS*2
3.6 9.3
mJ
Power dissipation
PD*3 2.0 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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20190527 - Rev.005
HS8K11
lThermal resistance
Parameter
Thermal resistance, junction - ambient
Datasheet
Symbol RthJA*3
Values Min. Typ. Max.
- - 62.5
Unit ℃/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol Type
Conditions
Drain - Source breakdown voltage
Breakdown voltage temperature coefficient
Tr...
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