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LME49722
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SNAS454A – MARCH 2008 – REVISED APRIL 2013
LME49722 Low Noise, High Performance, High Fidelity Dual Audio Operational Amplifier
Check for Samples: LME49722
FEATURES
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•2 Easily Drives 600Ω Loads • Optimized for Superior Audio Signal Fidelity • Output Short Circuit Protection • PSRR and CMRR Exceed 120dB (typ)
APPLICATIONS
• Ultra High Quality Audio Amplification • High Fidelity Preamplifiers, Phono Preamps,
and Multimedia • High Performance Professional Audio • High Fidelity Equalization and Crossover
Networks with Active Filters • High Performance Line Drivers and Receivers • Low Noise Industrial Applications Including
Test, Measurement, and Ultrasound
DESCRIPTION
The LME49722 is part of the ultra-low distortion, low noise, high slew rate operational amplifier series optimized and fully specified for high performance, high fidelity applications. Combining advanced leading-edge process technology with state-of-the-art circuit design, the LME49722 audio operational amplifiers deliver superior audio signal amplification for outstanding audio performance. The LME49722 combines extremely low voltage noise density (1.9nV/√Hz) rate with vanishingly low THD+N (0.00002%) to easily satisfy the most demanding audio applications. To ensure that the most challenging loads are driven without compromise, the LME49722 has a high slew rate of ±22V/µs and an output current capability of ±28mA. Further, dynamic range is maximized by an output stage that drives 2kΩ loads to within 1V of either power supply voltage.
The LME49722 has a wide supply range of ±2.5V to ±18V. Over this supply range the LME49722 maintains excellent common-mode and power supply rejection, and low input bias current. This Audio Operational Amplifier achieves outstanding AC performance while driving complex loads with values as high as 100pF with gain value greater than 2. Directly interchangeable with LME49720, LM4562 and LME49860 for similar operating voltages.
Table 1. KEY SPECIFICATIONS
Wide Operating Voltage Range
Equivalent Noise (Frequency = 1kHz)
Equivalent Noise (Frequency = 10Hz)
PSRR Slew Rate THD+N (AV = 1, VOUT = 3VRMS, fIN = 1kHz) Open Loop Gain (RL = 600Ω) Input Bias Current Voltage Offset
RL = 2kΩ RL = 600Ω
VALUE ±2.5V to ±18
1.9
2.8
120 ±22 0.00002 0.00002 135 50 ±0.02
UNIT
V
nV/√Hz (typ) nV/√Hz (typ) dB (typ) V/μs (typ) % (typ) % (typ) dB (typ) nA (typ) mV (typ)
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Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners.
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PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright © 2008–2013, Texas Instruments Incorporated
LME49722
SNAS454A – MARCH 2008 – REVISED APRIL 2013
Typical Application
R1 C1
C2
R2
LME49722 +
VP-P
fMAX = > 300 kHz for VP-P = 20V, R2 C2 | R1 C1
Figure 1. Wide Bandwidth Low Noise Low Drift Amplifier
Connection Diagram
1 OUTPUT A
8 V+
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2 INVERTING INPUT A
NON-INVERTING 3 INPUT A
AB
- ++ -
7 OUTPUT B
6 INVERTING INPUT B
V- 4
5 NON-INVERTING INPUT B
Figure 2. 8-Lead SOIC See D Package
2 Submit Documentation Feedback
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Copyright © 2008–2013, Texas Instruments Incorporated
LME49722
www.ti.com
SNAS454A – MARCH 2008 – REVISED APRIL 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings (1)(2)(3)
Supply Voltage (VS = VCC-VEE) Storage Temperature
38V −65°C to 150°C
Input Voltage Output Short Circuit(4) ESD Susceptibility(5) ESD Susceptibility(6)
(V-) - 0.7V to (V+) + 0.7V Continuous 2000V 200V
Junction Temperature (TJMAX) Thermal Resistance
θJA θJC
150°C 154°C/W
27°C/W
(1) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating
Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. All
voltages are measured with respect to the ground pin, unless otherwise specified.
(2) The Electrical Characteristics tables list specifications under the listed Recommended Operating Conditions except as otherwise
modified or specified by the Electrical Characteristics Conditions and/or Note.