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MCD162-18io1 Dataheets PDF



Part Number MCD162-18io1
Manufacturers IXYS
Logo IXYS
Description Thyristor Module
Datasheet MCD162-18io1 DatasheetMCD162-18io1 Datasheet (PDF)

Thyristor \ Diode Module Phase leg Part number MCD162-18io1 3 1 5 42 MCD162-18io1 VRRM I TAV VT = 2x 1800 V = 181 A = 1.03 V Backside: isolated Features / Advantages: ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic Applications: ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control Package: Y4 ● Isolation Voltage: 3600 V~ ● Industr.

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Thyristor \ Diode Module Phase leg Part number MCD162-18io1 3 1 5 42 MCD162-18io1 VRRM I TAV VT = 2x 1800 V = 181 A = 1.03 V Backside: isolated Features / Advantages: ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic Applications: ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control Package: Y4 ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. © 2016 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20160408b MCD162-18io1 Rectifier Ratings Symbol VRSM/DSM VRRM/DRM I R/D VT I TAV I T(RMS) VT0 rT R thJC RthCH Ptot I TSM I²t CJ PGM PGAV (di/dt)cr (dv/dt)cr VGT IGT VGD IGD IL IH t gd tq Definition Conditions max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage reverse current, drain current forward voltage drop average forward current RMS forward current VR/D = 1800 V VR/D = 1800 V IT = 150 A I T = 300 A IT = 150 A I T = 300 A TC = 85°C 180° sine TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125 °C TVJ = 125°C min. typ. max. Unit 1900 V 1800 V 300 µA 10 mA 1.09 V 1.25 V 1.03 V 1.25 V 181 A 300 A threshold voltage slope resistance for power loss calculation only TVJ = 125°C 0.88 V 1.15 mΩ thermal resistance junction to case 0.155 K/W thermal resistance case to heatsink 0.070 K/W total power dissipation max. forward surge current value for fusing junction capacitance max. gate power dissipation average gate power dissipation t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VR = 400 V tP = 30 µs tP = 500 µs f = 1 MHz TC = 25°C TVJ = 45°C VR = 0 V TVJ = 125°C VR = 0 V TVJ = 45°C VR = 0 V TVJ = 125°C VR = 0 V TVJ = 25°C TC = 125°C 645 W 6.00 kA 6.48 kA 5.10 kA 5.51 kA 180.0 kA²s 174.7 kA²s 130.1 kA²s 126.3 kA²s 273 pF 120 W 60 W 8W critical rate of rise of current critical rate of rise of voltage gate trigger voltage gate trigger current gate non-trigger voltage gate non-trigger current TVJ = 125 °C; f = 50 Hz repetitive, IT = 540 A tP = 200 µs; diG /dt = 0.5 A/µs; IG = 0.5 A; V = ⅔ VDRM non-repet., IT = 180 A V = ⅔ VDRM TVJ = 125°C R GK = ∞; method 1 (linear voltage rise) VD = 6 V TVJ = 25°C TVJ = -40°C VD = 6 V TVJ = 25°C TVJ = -40°C VD = ⅔ VDRM TVJ = 125°C 150 A/µs 500 A/µs 1000 V/µs 2.5 V 2.6 V 150 mA 200 mA 0.2 V 10 mA latching current holding current gate controlled delay time turn-off time t p = 30 µs TVJ = 25 °C IG = 0.5 A; diG/dt = 0.5 A/µs VD = 6 V RGK = ∞ TVJ = 25 °C VD = ½ VDRM TVJ = 25 °C IG = 0.5 A; diG/dt = 0.5 A/µs VR = 100 V; IT = 300 A; V = ⅔ VDRM TVJ =100 °C di/dt = 10 A/µs dv/dt = 20 V/µs tp = 200 µs 300 mA 200 mA 2 µs 150 µs IXYS reserves the right to change limits, conditions and dimensions. © 2016 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20160408b MCD162-18io1 Package Y4 Ratings Symbol I RMS TVJ Top Tstg Weight Definition RMS current virtual junction temperature operation temperature storage temperature Conditions per terminal min. -40 -40 -40 typ. max. 300 125 100 125 150 Unit A °C °C °C g MD M T d Spp/App d Spb/Apb V ISOL .


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