Document
High Voltage Thyristor Module
Phase leg
Part number
MCC161-20io1
3 67 1
542
MCC161-20io1
VRRM I TAV VT
= 2x 2000 V = 165 A = 1.08 V
Backside: isolated
Features / Advantages:
● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic
Applications:
● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control
Package: Y4
● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20160408b
MCC161-20io1
Thyristor
Ratings
Symbol VRSM/DSM VRRM/DRM I R/D
VT
I TAV I T(RMS) VT0 rT R thJC RthCH Ptot I TSM
I²t
CJ PGM
PGAV (di/dt)cr
(dv/dt)cr
VGT
IGT
VGD IGD IL
IH t gd
tq
Definition
Conditions
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current forward voltage drop
average forward current RMS forward current
VR/D = 2000 V VR/D = 2000 V IT = 150 A I T = 300 A IT = 150 A I T = 300 A TC = 85°C 180° sine
TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 125°C TVJ = 25°C
TVJ = 125 °C
TVJ = 125°C
min.
typ. max. Unit 2100 V 2000 V 400 µA 40 mA 1.14 V 1.36 V 1.08 V 1.36 V 165 A 300 A
threshold voltage slope resistance
for power loss calculation only
TVJ = 125°C
0.80 V 1.6 mΩ
thermal resistance junction to case
0.155 K/W
thermal resistance case to heatsink
0.070
K/W
total power dissipation max. forward surge current
value for fusing
junction capacitance max. gate power dissipation average gate power dissipation
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 700 V tP = 30 µs tP = 500 µs
f = 1 MHz
TC = 25°C TVJ = 45°C VR = 0 V TVJ = 125°C VR = 0 V TVJ = 45°C VR = 0 V TVJ = 125°C VR = 0 V TVJ = 25°C TC = 125°C
645 W 6.00 kA 6.48 kA 5.10 kA 5.51 kA 180.0 kA²s 174.7 kA²s 130.1 kA²s 126.3 kA²s 195 pF 120 W
60 W 8W
critical rate of rise of current
critical rate of rise of voltage gate trigger voltage gate trigger current gate non-trigger voltage gate non-trigger current
TVJ = 125 °C; f = 50 Hz
repetitive, IT = 500 A
tP = 200 µs; diG /dt = 0.5 A/µs;
IG = 0.5 A; V = ⅔ VDRM
non-repet., IT = 160 A
V = ⅔ VDRM
TVJ = 125°C
R GK = ∞; method 1 (linear voltage rise)
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = ⅔ VDRM
TVJ = 125°C
150 A/µs
500 A/µs 1000 V/µs
2 2.6 150 200 0.25 10
V V mA mA V mA
latching current
holding current gate controlled delay time
turn-off time
t p = 30 µs
TVJ = 25 °C
IG = 0.45 A; diG/dt = 0.45 A/µs
VD = 6 V RGK = ∞
TVJ = 25 °C
VD = ½ VDRM
TVJ = 25 °C
IG = 0.5 A; diG/dt = 0.5 A/µs
VR = 100 V; IT = 160 A; V = ⅔ VDRM TVJ =100 °C
di/dt = 10 A/µs dv/dt = 20 V/µs tp = 200 µs
200 mA
200 mA 2 µs
150 µs
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20160408b
MCC161-20io1
Package Y4
Ratings
Symbol I RMS TVJ Top Tstg Weight
Definition
RMS current virtual junction temperature operation temperature storage temperature
Conditions
per terminal
min.
-40 -40 -40
typ. max. 300 125 100 125
150
Unit A °C °C °C g
MD M
T
d Spp/App d Spb/.