E13006

KSE13006/13007 KSE13006/13007 High Voltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor Control 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : KSE13006 : KSE13007 VCEO Collector-Emitter Voltage : KSE13006 : KSE13007 VEBO IC ICP IB PC TJ TSTG Emitter- Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 600 700 300 400 9 8 16 4 80 150 - 65 ~ 150 Units V V V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition BVCEO Collector- Emitter Breakdown Voltage : KSE13006 : KSE13007 IC = 10mA, IB = 0 IEBO hFE VCE(sat) Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage VBE (sat) *Base-Emitter Saturation Voltage Cob Output Capacitance fT Current Gain Bandwidth Product tON Turn On Time tSTG Storage Time tF Fall Time * Pulse test: PW≤300µs, Duty cycle≤2% VEB = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A IC = 2A, IB = 0.4A IC = 5A, IB = 1A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.5A VCC = 125V, IC = 5A IB1 = -IB2 = 1A RL = 50Ω Min. Typ. Max. Units 300 V 400 V 1 mA 8 60 5 30 1V 2V 3V 1.2 V 1.6 V 110 pF 4 MHz 1.6 µs 3 µs 0.7 µs ©2000 Fairchild Semiconductor Int...