Document
KSE44H Series
KSE44H Series
General Purpose Power Switching Applications
• Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A • Fast Switching Speeds
• Complement to KSE45H
1 TO-220 1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
: KSE44H 1,2 : KSE44H 4,5 : KSE44H 7,8 : KSE44H 10,11
VEBO IC ICP PC PC TJ TSTG
Emitter- Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature
Value 30 45 60 80 5 10 20 50
1.67 150 - 55 ~ 150
Units V V V V V A A W W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICES IEBO hFE
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain : KSE44H 1,4,7,10 : KSE44H 2,5,8,11
VCE = Rated VCEO, VEB = 0 VEB = 5V, IC = 0
VCE = 1V, IC = 2A
VCE(sat)
*Collector-Emitter Saturation Voltage : KSE44H 1, 4, 7 10 : KSE44H 2, 5, 8,11
VBE (sat)
*Base-Emitter Saturation Voltage
fT Current Gain Bandwidth Product
Cob Output Capacitance
tON Turn ON Time
tSTG
Storage Time
tF Fall Time
* Pulse test: PW≤300µs, Duty cycle≤2%
IC = 8A, IB = 0.8A IC = 8A, IB = 0.4A
IC = 8A, IB = 0.8A
VCE = 10V, IC = 0.5A
VCB = 10V, f = 1MHz
VCC =20V, IC = 5A IB1 = - IB2 = 0.5A
Min.
35 60
Typ.
50 130 300 500 140
Max. 10 100
Units µA µA
1V 1V 1.5 V
MHz pF ns ns ns
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics
hFE, DC CURRENT GAIN
1000 100
V = 1V CE
10
1 0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
10
1000
f=100MHZ
100
Cob[pF], CAPACITANCE
PC[W], POWER DISSIPATION
10 1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector Output Capacitance
60 50 40 30 20 10
0 0 25 50 75 100 125 150 175
Tc[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2001 Fairchild Semiconductor Corporation
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
10 1 VBE(sat)
I = 10 I CB
0.1 VCE(sat)
0.01 0.01
0.1 1
10
IC[A], COLLECTOR CURRENT
100
Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
100
10 DC
1µs 1ms
1
44H 1,2 44H 4,5 44H 7,8 44H 10,11
10µs 100µs
0.1 1
10 100 1000
V [V], COLLECTOR-EMITTER VOLTAGE CE
Figure 4. Safe Operating Area
Rev. A1, June 2001
KSE44H Series
2.80 ±0.10
(1.70) 1.30 ±0.10
KSE44H Series
(45°)
Package Demensions
TO-220
9.90 ±0.20 (8.70)
ø3.60 ±0.10
4.50 ±0.20
1.30
+0.10 –0.05
(3.00) (3.70) 15.90 ±0.20 18.95MAX.
9.20 ±0.20 (1.46)
10.08 ±0.30
13.08 ±0.20 (1.00)
1.27 ±0.10
2.54TYP [2.54 ±0.20]
1.52 ±0.10
0.80 ±0.10 2.54TYP [2.54 ±0.20]
0.50
+0.10 –0.05
2.40 ±0.20
10.00 ±0.20
©2001 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A1, June 2001
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PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Preliminary
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