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KSE44H1 Dataheets PDF



Part Number KSE44H1
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Datasheet KSE44H1 DatasheetKSE44H1 Datasheet (PDF)

KSE44H Series KSE44H Series General Purpose Power Switching Applications • Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A • Fast Switching Speeds • Complement to KSE45H 1 TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCEO Collector-Emitter Voltage : KSE44H 1,2 : KSE44H 4,5 : KSE44H 7,8 : KSE44H 10,11 VEBO IC ICP PC PC TJ TSTG Emitter- Base Voltage Collector Current (D.

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KSE44H Series KSE44H Series General Purpose Power Switching Applications • Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A • Fast Switching Speeds • Complement to KSE45H 1 TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCEO Collector-Emitter Voltage : KSE44H 1,2 : KSE44H 4,5 : KSE44H 7,8 : KSE44H 10,11 VEBO IC ICP PC PC TJ TSTG Emitter- Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 30 45 60 80 5 10 20 50 1.67 150 - 55 ~ 150 Units V V V V V A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition ICES IEBO hFE Collector Cut-off Current Emitter Cut-off Current *DC Current Gain : KSE44H 1,4,7,10 : KSE44H 2,5,8,11 VCE = Rated VCEO, VEB = 0 VEB = 5V, IC = 0 VCE = 1V, IC = 2A VCE(sat) *Collector-Emitter Saturation Voltage : KSE44H 1, 4, 7 10 : KSE44H 2, 5, 8,11 VBE (sat) *Base-Emitter Saturation Voltage fT Current Gain Bandwidth Product Cob Output Capacitance tON Turn ON Time tSTG Storage Time tF Fall Time * Pulse test: PW≤300µs, Duty cycle≤2% IC = 8A, IB = 0.8A IC = 8A, IB = 0.4A IC = 8A, IB = 0.8A VCE = 10V, IC = 0.5A VCB = 10V, f = 1MHz VCC =20V, IC = 5A IB1 = - IB2 = 0.5A Min. 35 60 Typ. 50 130 300 500 140 Max. 10 100 Units µA µA 1V 1V 1.5 V MHz pF ns ns ns ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 Typical Characteristics hFE, DC CURRENT GAIN 1000 100 V = 1V CE 10 1 0.01 0.1 1 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain 10 1000 f=100MHZ 100 Cob[pF], CAPACITANCE PC[W], POWER DISSIPATION 10 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Collector Output Capacitance 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 Tc[oC], CASE TEMPERATURE Figure 5. Power Derating ©2001 Fairchild Semiconductor Corporation VBE(sat), VCE(sat)[V], SATURATION VOLTAGE IC[A], COLLECTOR CURRENT 10 1 VBE(sat) I = 10 I CB 0.1 VCE(sat) 0.01 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT 100 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 10 DC 1µs 1ms 1 44H 1,2 44H 4,5 44H 7,8 44H 10,11 10µs 100µs 0.1 1 10 100 1000 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 4. Safe Operating Area Rev. A1, June 2001 KSE44H Series 2.80 ±0.10 (1.70) 1.30 ±0.10 KSE44H Series (45°) Package Demensions TO-220 9.90 ±0.20 (8.70) ø3.60 ±0.10 4.50 ±0.20 1.30 +0.10 –0.05 (3.00) (3.70) 15.90 ±0.20 18.95MAX. 9.20 ±0.20 (1.46) 10.08 ±0.30 13.08 ±0.20 (1.00) 1.27 ±0.10 2.54TYP [2.54 ±0.20] 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 0.50 +0.10 –0.05 2.40 ±0.20 10.00 ±0.20 ©2001 Fairchild Semiconductor Corporation Dimensions in Millimeters Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® OPTOPLANAR™ STAR*POWER™ Bottomless™ FASTr™ PACMAN™ Stealth™ CoolFET™ FRFET™ POP™ SuperSOT™-3 CROSSVOLT™ DenseTrench™ GlobalOptoisolator™ GTO™ Power247™ PowerTrench® SuperSOT™-6 SuperSOT™-8 DOME™ HiSeC™ QFET™ SyncFET™ EcoSPARK™ E2CMOS™ ISOPLANAR™ LittleFET™ QS™ QT Optoelectronics™ TruTranslation™ TinyLogic™ EnSigna™ FACT™ FACT Quiet Series™ MicroFET™ MICROWIRE™ OPTOLOGIC™ Quiet Series™ SLIENT SWITCHER® SMART START™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification N.


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