KSE44H8

KSE44H Series KSE44H Series General Purpose Power Switching Applications Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A Fast Switching Speeds Complement to KSE45H 1 TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCEO Collector-Emitter Voltage : KSE44H 1,2 : KSE44H 4,5 : KSE44H 7,8 : KSE44H 10,11 VEBO IC ICP PC PC TJ TSTG Emitter- Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 30 45 60 80 5 10 20 50 1.67 150 - 55 ~ 150 Units V V V V V A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition ICES IEBO hFE Collector Cut-off Current Emitter Cut-off Current *DC Current Gain : KSE44H 1,4,7,10 : KSE44H 2,5,8,11 VCE = Rated VCEO, VEB = 0 VEB = 5V, IC = 0 VCE = 1V, IC = 2A VCE(sat) *Collector-Emitter Saturation Voltage : KSE44H 1, 4, 7 10 : KSE44H 2, 5, 8,11 VBE (sat) *Base-Emitter Saturation Voltage fT Current Gain Bandwidth Product Cob Output Capacitance tON Turn ON Time tSTG Storage Time tF Fall Time * Pulse test: PW≤300µs, Duty cycle≤2% IC = 8A, IB = 0.8A IC = 8A, IB = 0.4A IC = 8A, IB = 0.8A VCE = 10V, IC = 0.5A VCB = 10V, f = 1MHz VCC =20V, IC = 5A IB1 = - IB2 = 0.5A Min. 35 60 Typ. 50 130 300 500 140 Max. 10 100 Units µA µA 1V 1V 1.5 V MHz pF ns ns ...