13007 Datasheet: NPN Silicon Transistor





13007 NPN Silicon Transistor Datasheet

Part Number 13007
Description NPN Silicon Transistor
Manufacture Trea Sure Star
Total Page 5 Pages
PDF Download Download 13007 Datasheet PDF

Features: 13007 NPN Silicon Transistor High Voltag e Switch Mode Application Features � High Speed Switching � Suitable for E lectronic Ballast and Switching Regulat or � Case:TO-220AB Absolute Maximum R atings (Ta=25℃ unless otherwise noted ) 13007 DRAWING 1.Base 2.Collector 3.E mitter Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base V oltage Collector-Emitter Voltage Emitte r-Base Voltage Collector Current(DC) Co llector Current(Pulse) Base Current Col lector Dissipation(Ta=25℃) Junction T emperature Storage Temperature Value 7 00 430 9 8 16 4 80 150 -65~150 Units V V V A A A W ℃ ℃ Electrical Charac teristics (Tc=25℃ unless otherwise no ted) Symbol BVCEO IEBO Hfe1 Hfe2 Para meter Collector-Emitter Breakdown Volta ge Emitter Cut-off Current DC Current G ain VCE(sat) Collector-Emitter Satura tion Voltage VBE(sat) Base-Emitter Sa turation Voltage Ft Current Gain Bandw idth Product Cob Output Capacitance T on Turn On time TSTG Storge Time TF Fall Time Pulse Test:PW≤300us,Duty Cycl.

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13007
NPN Silicon Transistor
High Voltage Switch Mode Application
Features
High Speed Switching
Suitable for Electronic Ballast and Switching Regulator
Case:TO-220AB
Absolute Maximum Ratings (Ta=25unless otherwise noted)
13007
DRAWING
1.Base 2.Collector 3.Emitter
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Ta=25)
Junction Temperature
Storage Temperature
Value
700
430
9
8
16
4
80
150
-65~150
Units
V
V
V
A
A
A
W
Electrical Characteristics (Tc=25℃ unless otherwise noted)
Symbol
BVCEO
IEBO
Hfe1
Hfe2
Parameter
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
Ft Current Gain Bandwidth Product
Cob Output Capacitance
Ton Turn On time
TSTG
Storge Time
TF Fall Time
Pulse Test:PW≤300us,Duty Cycle≤2%
Conditions
IC=1mA,IB=0
VEB=9V,Ic=0
VCE=5V,IC=10mA
VCE=5V,IC=2A
IC=2A,IB=0.5A
IC=5A,IB=1A
IC=8A,IB=2A
IC=2A,IB=0.5A
IC=5A,IB=1A
VCE=10V,IC=0.5A
VCB=10V,F=0.1MHZ
VCC=125V,IC=5A
IB1=-IB2=1A RL=50Ω
Min
430
8
20
4
Typ
110
Max
0.2
40
40
0.8
0.8
2.9
1.0
1.0
1.6
3
0.7
Units
V
mA
V
V
V
V
V
MHZ
PF
us
us
us
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