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CMPA0527005F Dataheets PDF



Part Number CMPA0527005F
Manufacturers CREE
Logo CREE
Description GaN HEMT
Datasheet CMPA0527005F DatasheetCMPA0527005F Datasheet (PDF)

CMPA0527005F 5 W, 0.5 - 2.7 GHz, 50 V, GaN HEMT CMPA0527005F is packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This device is matched to 50 ohms at the input and unmatched at the output. This device operates from a 50 V rail and is intended to be used as a predriver from 0.5 to 2.7 GHz. The transistor is available in a 6 leaded flange package. PackPaNg:eCTMyPpAes0:52474000252F1 Typical Performance Over 0.5 - 2.7 GHz.

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CMPA0527005F 5 W, 0.5 - 2.7 GHz, 50 V, GaN HEMT CMPA0527005F is packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This device is matched to 50 ohms at the input and unmatched at the output. This device operates from a 50 V rail and is intended to be used as a predriver from 0.5 to 2.7 GHz. The transistor is available in a 6 leaded flange package. PackPaNg:eCTMyPpAes0:52474000252F1 Typical Performance Over 0.5 - 2.7 GHz (TC = 25˚C), 50 V, PIN = 24 dBm, CW Parameter 0.5 GHz 1.0 GHz 1.5 GHz 2.0 GHz 2.7 GHz Small Signal Gain 20.4 20.8 21 20.5 19.5 Output Power 7.8 9.3 9.1 8.7 6.6 Drain Efficiency 58.5 53.8 49.2 47.1 41.5 Note: Measured in the CMPA0527005F-AMP1 application circuit. Units dB W % Features • Up to 2.7 GHz Operation • 8 W Typical Output Power • 20 dB Small Signal Gain • Application Circuit for 0.5 - 2.7 GHz • 50% Efficiency • 50 V Operation Rev 1.2 - March 2020 Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque VDSS VGS TSTG TJ IGMAX IDMAX TS τ 150 -10, +2 -65, +150 225 1.2 0.5 245 40 Thermal Resistance, Junction to Case3 RθJC 18 Case Operating Temperature4 TC -40, +75 Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CMPA0527005F at PDISS = 8.4 W. 4 See also, Power Derating Curve on Page 5. Electrical Characteristics (TC = 25˚C) Units Volts Volts ˚C ˚C mA A ˚C in-oz ˚C/W ˚C Conditions 25˚C 25˚C 25˚C 25˚C 85˚C Characteristics DC Characteristics1 Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 1.2 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 50 V, ID = 0.11 A Saturated Drain Current2 IDS 0.78 1.12 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 100 – – VDC VGS = -8 V, ID = 1.2 mA RF Characteristics3,4,5 (TC = 25˚C, F0 = 2.7 GHz unless otherwise noted) Small Signal Gain S21 17 18.5 – dB VDD = 50 V, IDQ = 0.11 A PIN = 10 dBm Power Gain GP – 13.5 – dB VDD = 50 V, IDQ = 0.11 A Output Power POUT 38.6 39.5 – dBm VDD = 50 V, IDQ = 0.11 A Drain Efficiency η 49 58.0 – % VDD = 50 V, IDQ = 0.11 A Output Mismatch Stress VSWR – – 10:1 Y No damage at all phase angles, VDD = 50 V, IDQ = 0.11 A, POUT = 5 W CW Dynamic Characteristics6 Output Capacitance CDS – 0.8 – Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in Cree’s production test fixture. 4 PIN = 26 dBm 5 CW 6 Includes package pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Copyright © 2019-2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CMPA0527005F Rev 1.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 [email protected] www.cree.com/rf CMPA0527005F Typical Performance in CMPA0527005F-AMP1 Application Circuit Gain, Return Losses (dB) Figure 1. - Small Signal Gain, Return Losses versus Frequency of the CMPA0527005F Gain and InpuVt RDDetu=rn5Lo0ssVv,sIFDreQq=uen0cy.1o1f t0heACMPA0527005F VDD = 50V, IDQ = 0.110A 25 20 15 10 5 S22 S11 0 S21 -5 -10 -15 -20 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 Frequency (GHz) Output Power (dBm), Efficiency (%), Gain (dB) Figure 2. - Output Power, Power Added Efficiency and Gain vs Frequency of the CMPA0527005F as measured in demonstration amplifier circuit CMPA0527005F-AMP1 VDD = 50 V, IDQ =0.110 A, PIN= 24 dBm CW, Tcase = 25°C 65 60 55 50 45 40 35 30 Output Power (dBm) 25 Efficiency (%) 20 Gain (dB) 15 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Frequency (GHz) Copyright © 2019-2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CMPA0527005F Rev 1.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 [email protected] www.cree.com/rf CMPA0527005F Typical Performance in CMPA0527005F-AMP1 Application Circuit Figure 3. - Gain (dB) and Efficiency (%) vs Output Power (dBm) of the CMPA0527005F as measured in demonstration amplifier circuit CMPA0527005F-AMP1 GaVinDD(d=B) 5an0dVEV,fDfiIDcDi=eQn5=c0yV0,(%I.D1)Qv1s=0P0oA.1u1,t0T(Adc,BaTmcsa)esoef==th22e5C5CM°CPA0527005F 25 80 Gain Drain Efficiency 20 60 Efficiency (%) Gain (dB) 0.5 GHz Gain (dB) 1.5 GHz Gain (dB) 15 2.7GHz Ga.


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