CMPA0527005F
5 W, 0.5 - 2.7 GHz, 50 V, GaN HEMT
CMPA0527005F is packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This device is matched to 50 ohms at the input and unmatched at the output. This device operates from a 50 V rail and is intended to be used as a predriver from 0.5 to 2.7 GHz. The transistor is available in a 6 leaded flange package.
PackPaNg:eCTMyPpAes0:52474000252F1
Typical Performance Over 0.5 - 2.7 GHz (TC = 25˚C), 50 V, PIN = 24 dBm, CW
Parameter
0.5 GHz
1.0 GHz
1.5 GHz
2.0 GHz
2.7 GHz
Small Signal Gain
20.4
20.8
21
20.5
19.5
Output Power
7.8 9.3 9.1 8.7 6.6
Drain Efficiency
58.5
53.8
49.2
47.1
41.5
Note: Measured in the CMPA0527005F-AMP1 application circuit.
Units dB W %
Features
• Up to 2.7 GHz Operation • 8 W Typical Output Power • 20 dB Small Signal Gain • Application Circuit for 0.5 - 2.7 GHz • 50% Efficiency • 50 V Operation
Rev 1.2 - March 2020
Subject to change without notice. www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque
VDSS VGS TSTG TJ IGMAX IDMAX TS
τ
150 -10, +2 -65, +150
225 1.2 0.5 245 40
Thermal Resistance, Junction to Case3
RθJC
18
Case Operating Temperature4
TC -40, +75
Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CMPA0527005F at PDISS = 8.4 W. 4 See also, Power Derating Curve on Page 5.
Electrical Characteristics (TC = 25˚C)
Units Volts Volts
˚C ˚C mA A ˚C in-oz ˚C/W ˚C
Conditions 25˚C 25˚C
25˚C 25˚C
85˚C
Characteristics DC Characteristics1
Symbol Min. Typ. Max. Units Conditions
Gate Threshold Voltage
VGS(th)
-3.8 -3.0 -2.3
VDC VDS = 10 V, ID = 1.2 mA
Gate Quiescent Voltage
VGS(Q)
– -2.7 –
VDC VDS = 50 V, ID = 0.11 A
Saturated Drain Current2
IDS 0.78 1.12 –
A VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBR
100 –
– VDC VGS = -8 V, ID = 1.2 mA
RF Characteristics3,4,5 (TC = 25˚C, F0 = 2.7 GHz unless otherwise noted)
Small Signal Gain
S21
17 18.5 –
dB VDD = 50 V, IDQ = 0.11 A PIN = 10 dBm
Power Gain
GP
– 13.5 –
dB VDD = 50 V, IDQ = 0.11 A
Output Power
POUT
38.6 39.5 –
dBm VDD = 50 V, IDQ = 0.11 A
Drain Efficiency
η
49 58.0 –
% VDD = 50 V, IDQ = 0.11 A
Output Mismatch Stress
VSWR
–
– 10:1 Y No damage at all phase angles, VDD = 50 V, IDQ = 0.11 A, POUT = 5 W CW
Dynamic Characteristics6
Output Capacitance
CDS – 0.8 –
Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in Cree’s production test fixture. 4 PIN = 26 dBm 5 CW 6 Includes package
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Copyright © 2019-2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
2 CMPA0527005F Rev 1.2
Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733
[email protected]
www.cree.com/rf
CMPA0527005F Typical Performance in CMPA0527005F-AMP1 Application Circuit
Gain, Return Losses (dB)
Figure 1. - Small Signal Gain, Return Losses versus Frequency of the CMPA0527005F Gain and InpuVt RDDetu=rn5Lo0ssVv,sIFDreQq=uen0cy.1o1f t0heACMPA0527005F
VDD = 50V, IDQ = 0.110A
25
20
15
10
5 S22 S11
0 S21
-5
-10
-15
-20 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7
Frequency (GHz)
Output Power (dBm), Efficiency (%), Gain (dB)
Figure 2. - Output Power, Power Added Efficiency and Gain vs Frequency of the CMPA0527005F as measured in demonstration amplifier circuit CMPA0527005F-AMP1
VDD = 50 V, IDQ =0.110 A, PIN= 24 dBm CW, Tcase = 25°C
65
60
55
50
45
40
35
30 Output Power (dBm) 25 Efficiency (%) 20 Gain (dB)
15
10
5
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency (GHz)
Copyright © 2019-2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
3 CMPA0527005F Rev 1.2
Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733
[email protected]
www.cree.com/rf
CMPA0527005F Typical Performance in CMPA0527005F-AMP1 Application Circuit
Figure 3. - Gain (dB) and Efficiency (%) vs Output Power (dBm) of the CMPA0527005F as measured in demonstration amplifier circuit CMPA0527005F-AMP1 GaVinDD(d=B) 5an0dVEV,fDfiIDcDi=eQn5=c0yV0,(%I.D1)Qv1s=0P0oA.1u1,t0T(Adc,BaTmcsa)esoef==th22e5C5CM°CPA0527005F
25 80
Gain
Drain Efficiency
20 60
Efficiency (%)
Gain (dB)
0.5 GHz Gain (dB)
1.5 GHz Gain (dB) 15 2.7GHz Ga.