CMPA0527005F Datasheet: GaN HEMT





CMPA0527005F GaN HEMT Datasheet

Part Number CMPA0527005F
Description GaN HEMT
Manufacture CREE
Total Page 12 Pages
PDF Download Download CMPA0527005F Datasheet PDF

Features: CMPA0527005F 5 W, 0.5 - 2.7 GHz, 50 V, G aN HEMT CMPA0527005F is packaged galliu m nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic micr owave integrated circuit (MMIC). This d evice is matched to 50 ohms at the inpu t and unmatched at the output. This dev ice operates from a 50 V rail and is in tended to be used as a predriver from 5 00 MHz to 2700 MHz. The transistor is a vailable in a 6 leaded flange package. PackPaNg:eCTMyPpAes0:52474000252F1 Ty pical Performance Over 500 MHz - 2.7 GH z (TC = 25˚C), 50 V, PIN = 24dBm, CW Parameter 500 MHz 1.0 GHz 1.5 GHz 2 .0 GHz 2.7 GHz Small Signal Gain 20. 4 20.8 21 20.5 19.5 Output Power 7.8 9.3 9.1 8.7 6.6 Drain Efficiency 58.5 53.8 49.2 47.1 41.5 Note: Mea sured in the CMPA0527005F-AMP1 applicat ion circuit. Units dB W % Features Up to 2.7 GHz Operation • 39 dBm Typical Output Power • 20 dB Small S ignal Gain • Application Circuit for 0.5 - 2.7 GHz • 50 % Efficiency • 50 V Operation Rev 1.0 - April 201.

Keywords: CMPA0527005F, datasheet, pdf, CREE, GaN, HEMT, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

CMPA0527005F
5 W, 0.5 - 2.7 GHz, 50 V, GaN HEMT
CMPA0527005F is packaged gallium nitride (GaN) High Electron
Mobility Transistor (HEMT) based monolithic microwave integrated
circuit (MMIC). This device is matched to 50 ohms at the input and
unmatched at the output. This device operates from a 50 V rail and
is intended to be used as a predriver from 500 MHz to 2700 MHz.
The transistor is available in a 6 leaded flange package.
PackPaNg:eCTMyPpAes0:52474000252F1
Typical Performance Over 500 MHz - 2.7 GHz (TC = 25˚C), 50 V, PIN = 24dBm, CW
Parameter
500 MHz
1.0 GHz
1.5 GHz
2.0 GHz
2.7 GHz
Small Signal Gain
20.4
20.8
21
20.5
19.5
Output Power
7.8 9.3 9.1 8.7 6.6
Drain Efficiency
58.5
53.8
49.2
47.1
41.5
Note:
Measured in the CMPA0527005F-AMP1 application circuit.
Units
dB
W
%
Features
• Up to 2.7 GHz Operation
• 39 dBm Typical Output Power
• 20 dB Small Signal Gain
• Application Circuit for 0.5 - 2.7 GHz
50 % Efficiency
• 50 V Operation
Subject to change without notice.
www.cree.com/rf
1

                    
              






Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)