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2SC5294A Dataheets PDF



Part Number 2SC5294A
Manufacturers Panasonic
Logo Panasonic
Description Silicon NPN Transistor
Datasheet 2SC5294A Datasheet2SC5294A Datasheet (PDF)

Power Transistors 2SC5294, 2SC5294A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm s Features q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to 2SC5294 base voltage 2SC5294A Collector to 2SC5294 base voltage 2SC5294A Collector to emitter voltage Emitter to base voltage Peak collector current .

  2SC5294A   2SC5294A



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Power Transistors 2SC5294, 2SC5294A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm s Features q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to 2SC5294 base voltage 2SC5294A Collector to 2SC5294 base voltage 2SC5294A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg Ratings 1500 1600 1500 1600 600 5 30 20 10 120 3.5 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 3.3±0.3 0.7±0.1 4.5 15.5±0.5 φ3.2±0.1 3.0±0.3 5° 5° 23.4 22.0±0.5 2.0 1.2 10.0 26.5±0.5 4.0 2.0±0.2 1.1±0.1 5.45±0.3 5° 5° 5° 5° 2.0 18.6±0.5 5.45±0.3 0.7±0.1 5.5±0.3 2.0 123 1:Base 2:Collector 3:Emitter TOP–3E Full Pack Package s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions 2SC5294 Collector cutoff current 2SC5294A 2SC5294 ICBO 2SC5294A Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time IEBO hFE VCE(sat) VBE(sat) fT tstg tf VCB = 1000V, IE = 0 VCB = 1500V, IE = 0 VCB = 1600V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10A IC = 10A, IB = 2.8A IC = 10A, IB = 2.8A VCE = 10V IC = 12A, IB1 = 2.4A, IB2 = –4.8A min typ max Unit 50 µA 50 1 mA 1 50 µA 5 12 3V 1.5 V 3 MHz 1.5 2.5 µs 0.12 0.2 µs 1 Collector power dissipation PC (W) Collector current IC (A) Collector current IC (A) 2SC5294 2SC5294A Power Transistors 250 200 150 (1) 100 PC — Ta (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (PC=12W) (3) Without heat sink (PC=3.5W) 50 (2) (3) 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Area of safe operation (ASO) 100 ICP 10 IC 10ms t=100µs 1ms DC 1 0.1 0.01 Non repetitive pulse 0.001 TC=25˚C 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) 2SC5294, 2SC5294A Area of safe operation, horizontal operation ASO 50 f=64kHz, TC<90˚C Area of safe operation with respect to the single pulse 40 overload curve at the time of switching ON, shutting down by the high voltage spark, holding down and like that, 30 during horizontal operation. 20 10 <1mA 0 0 500 1000 1500 2000 Collector to emitter voltage VCE (V) 2 .


OPA2625 2SC5294A OPA653


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