2SC5294A Datasheet: Silicon NPN triple diffusion mesa type Power Transistor





2SC5294A Silicon NPN triple diffusion mesa type Power Transistor Datasheet

Part Number 2SC5294A
Description Silicon NPN triple diffusion mesa type Power Transistor
Manufacture Panasonic
Total Page 2 Pages
PDF Download Download 2SC5294A Datasheet PDF

Features: Power Transistors 2SC5294, 2SC5294A Sili con NPN triple diffusion mesa type For horizontal deflection output Unit: mm s Features q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operatio n (ASO) s Absolute Maximum Ratings (Ta =25˚C) Parameter Collector to 2SC529 4 base voltage 2SC5294A Collector to 2SC5294 base voltage 2SC5294A Collect or to emitter voltage Emitter to base voltage Peak collector current Collec tor current Base current Collector po wer TC=25°C dissipation Ta=25°C Ju nction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg Ratings 1500 1600 1500 1600 600 5 30 20 10 120 3.5 150 –55 to +1 50 Unit V V V V A A A W ˚C ˚C 3.3± 0.3 0.7±0.1 4.5 15.5±0.5 φ3.2±0.1 3.0±0.3 5° 5° 23.4 22.0±0.5 2.0 1.2 10.0 26.5±0.5 4.0 2.0±0.2 1.1±0 .1 5.45±0.3 5° 5° 5° 5° 2.0 18.6 ±0.5 5.45±0.3 0.7±0.1 5.5±0.3 2.0 123 1:Base 2:Collector 3:Emitter TOP–3E Full Pa.

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Power Transistors
2SC5294, 2SC5294A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
s Features
q High breakdown voltage, and high reliability through the use of a
glass passivation layer
q High-speed switching
q Wide area of safe operation (ASO)
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to 2SC5294
base voltage 2SC5294A
Collector to 2SC5294
base voltage 2SC5294A
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
1500
1600
1500
1600
600
5
30
20
10
120
3.5
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
15.5±0.5
φ3.2±0.1
3.0±0.3
5° 5°
4.0
2.0±0.2
1.1±0.1
5.45±0.3
5°
5°
5°
5°
5.45±0.3
0.7±0.1
123
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
2SC5294
Collector cutoff
current
2SC5294A
2SC5294
ICBO
2SC5294A
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
IEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
VCB = 1000V, IE = 0
VCB = 1500V, IE = 0
VCB = 1600V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 10A
IC = 10A, IB = 2.8A
IC = 10A, IB = 2.8A
VCE = 10V
IC = 12A, IB1 = 2.4A, IB2 = –4.8A
min typ max Unit
50
µA
50
1
mA
1
50 µA
5 12
3V
1.5 V
3 MHz
1.5 2.5 µs
0.12 0.2
µs
1

     






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