OPA659 Datasheet: OPERATIONAL AMPLIFIER





OPA659 OPERATIONAL AMPLIFIER Datasheet

Part Number OPA659
Description OPERATIONAL AMPLIFIER
Manufacture etcTI
Total Page 30 Pages
PDF Download Download OPA659 Datasheet PDF

Features: Product Folder Sample & Buy Technical Documents Tools & Software Support & Community OPA659 SBOS342C – DECEMBER 2008 – REVISED NOVEMBER 2015 OPA659 Wideband, Unity-Gain Stable, JFET-Input Operational Amplifier 1 Features •1 High Bandwidth: 650 MHz (G = 1 V/V) High Slew Rate: 2550 V/μs (4-V Step) • Excellent THD: –78 dBc at 10 MHz • Low Input Voltage Noise: 8.9 nV/ Hz • Fast Overdrive Recovery: 8 ns Fast Settling time (1% 4-V Step): 8 ns • Low Input Offset Voltage: ±1 mV • Low Input Bias Current: ±10 pA High Output Current: 70 mA 2 Applicat ions • High-Impedance Data Acquisitio n Input Amplifiers • High-Impedance O scilloscope Input Amplifiers • Wideba nd Photodiode Transimpedance Amplifiers • Wafer Scanning Equipment • Optic al Time-Domain Reflectometry (OTDR) • High-Speed Time-of-Flight (TOF) Sensin g 3 Description The OPA659 combines a very wideband, unity-gain stable, volta ge-feedback operational amplifier with a JFET-input stage to offer an ultra-high dynamic range amplifier.

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OPA659
SBOS342C – DECEMBER 2008 – REVISED NOVEMBER 2015
OPA659 Wideband, Unity-Gain Stable, JFET-Input
Operational Amplifier
1 Features
1 High Bandwidth: 650 MHz (G = 1 V/V)
• High Slew Rate: 2550 V/μs (4-V Step)
• Excellent THD: –78 dBc at 10 MHz
• Low Input Voltage Noise: 8.9 nV/Hz
• Fast Overdrive Recovery: 8 ns
• Fast Settling time (1% 4-V Step): 8 ns
• Low Input Offset Voltage: ±1 mV
• Low Input Bias Current: ±10 pA
• High Output Current: 70 mA
2 Applications
• High-Impedance Data Acquisition Input Amplifiers
• High-Impedance Oscilloscope Input Amplifiers
• Wideband Photodiode Transimpedance Amplifiers
• Wafer Scanning Equipment
• Optical Time-Domain Reflectometry (OTDR)
• High-Speed Time-of-Flight (TOF) Sensing
3 Description
The OPA659 combines a very wideband, unity-gain
stable, voltage-feedback operational amplifier with a
JFET-input stage to offer an ultra-high dynamic range
amplifier for high impedance buffering in data
acquisition applications such as oscilloscope front-
end amplifiers and machine vision applications such
as photodiode transimpedance amplifiers used in
wafer inspection.
The wide 650-MHz unity-gain bandwidth is
complemented by a very high 2550-V/μs slew rate.
The high input impedance and low bias current
provided by the JFET input are supported by the low
8.9-nV/Hz input voltage noise to achieve a very low
integrated noise in wideband photodiode
transimpedance applications.
Broad transimpedance bandwidths are possible with
the high 350-MHz gain bandwidth product of this
device.
Where lower speed with lower quiescent current is
required, consider the OPA656. Where unity-gain
stability is not required, consider the OPA657.
Photo
Diode
Typical Application
+6V
ID CD
-VB
0.1mF
10mF
OPA659
VOUT
ROUT
50W Load
RF
CF
0.1mF
10mF
-6V
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
OPA659
SOT-23 (5)
SON (8)
2.90 mm × 1.60 mm
3.00 mm × 3.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Transimpedance Gain vs Frequency
130
RF = 1MW, CF = Open
120
RF = 100kW, CF = Open
110 RF = 10kW,
100 CF = Open
90
RF = 100kW,
CF = 0.5pF
80
70 RF = 10kW, CF = 1.5pF
RF = 1kW, CF = Open
60
50
40
100k
RF = 1kW, CF = 4.7pF
1M 10M
Frequency (Hz)
100M
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

                    
                    






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