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TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TCK2291xG
TCK2291xG
2A Load Switch IC with True Reverse Current Blocking
The TCK2291xG series is Load Switch ICs for power management with True Reverse Current Blocking and Thermal Shutdown function featuring low switch on resistance, ultra low quiescent current, high output current and wide input voltage operation from 1.1 to 5.5 V. Switch ON resistance is only 31 mΩ at 5.0 V, -0.15 A load conditions and output current is available on 2.0 A. And these feature a slew rate control driver and output auto-discharge function. This device is available in 0.4 mm pitch ultra small package WCSP6E (0.8 mm x 1.2 mm, t: 0.55 mm).Thus this devices is ideal for portable applications that require high-density board assembly such as cellular phone.
Feature
True Reverse Current Blocking Thermal Shutdown function Output auto-discharge (Option) Under voltage lockout Low ON resistance :
RON = 31 mΩ (typ.) at VIN = 5.0 V, IOUT = -0.15 A RON = 40 mΩ (typ.) at VIN = 3.3 V, IOUT = -0.15 A RON = 70 mΩ (typ.) at VIN = 1.8 V, IOUT = -0.15 A RON = 141 mΩ (typ.) at VIN = 1.2 V, IOUT = -0.15 A Low Quiescent Current: IQ = 11 μA (typ.) at IOUT = 0 mA Low standby current: IQ(OFF) = 0.6 μA (typ.) at OFF state Inrush current reduction circuitt Pull down connection between Control and GND(Option) Ultra small package : WCSP6E (0.8 mm x 1.2 mm, t: 0.55 mm)
WCSP6E Weight: 1 mg (typ.)
© 2017 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2016-06
2017-10-18
Function Table
TCK2291xG
Function
Part number
True Reverse current blocking
Output auto-discharge
TCK22910G TCK22911G TCK22912G TCK22913G
Built in Built in Built in Built in
N/A Built in
N/A Built in
Under voltage Thermal shut
lock out
down
Built in Built in Built in Built in
Built in Built in Built in Built in
Control pin polarity
Active Low Active Low Active High Active High
Control pin pull down connection
Built in Built in
Device Marking
4S 3S 2S 1S
© 2017 Toshiba Electronic Devices & Storage Corporation
2
2017-10-18
Absolute Maximum Ratings (Ta = 25°C)
TCK2291xG
Characteristics
Symbol
Rating
Unit
Input voltage Control voltage Output voltage
Output current
Power dissipation Operating temperature range Junction temeperature Storage temperature
VIN VCT VOUT
IOUT
PD Topr
Tj Tstg
DC Pulse
-0.3 to 6.0 -0.3 to 6.0 -0.3 to 6.0
2.0 3.0 (Note1) 800 (Note 2) −40 to 85 150 −55 to 150
V V V A A mW °C °C °C
Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note1: 100 μs pulse, 2% duty cycle
Note2: Rating at mounting on a board
Glass epoxy board dimension : 40mm x 40mm (both sides of board), t=1.6mm Metal pattern ratio : a surface approximately 50%, the reverse side approximately 50% Through hole : diameter 0.5mm x 28)
Operating conditions
Characteristics Input voltage Output voltage Output current
Control High-level input voltage
Control Low-level input voltage
Symbol
Condition
VIN VOUT IOUT
VIH
VIL
1.8 V ≤ VIN 1.2V < VIN ≤ 5.5 V 1.1V ≤VIN ≤1.2 V
― ―
―
Min Max Unit
1.1 5.5 V ― VIN V ― 2.0 A 1.0 ―
V 0.9 ― ― 0.4 V
Pin Assignment(Top view)
AB
C
2
1
A1: VOUT B1: VOUT C1: GND A2: VIN B2: VIN C2: Control
Top marking
Lot trace code
Device Marking
Index
VOUT
© 2017 Toshiba Electronic Devices & Storage Corporation
3
2017-10-18
Block Diagram
TCK2291xG
V
IN
Control
UVLO
Reverse current blocking
Q1
Thermal Shut down
Slew Rate Control Driver
Control Logic
Pull Down
*
Output Discharge
Operation logic table
VOUT
Q2 *
GND
*:Option
Control “High”
Control “Low”
Output Q1 Discharge Q2
Reverse current blocking
Output Q1 Discharge Q2
Reverse current blocking
TCK22910G OFF ―
TCK22911G OFF ON
TCK22912G ON ―
TCK22913G ON OFF
Active
Active
Active
Active
ON
ON
OFF
OFF
― OFF ―
ON
Active
Active
Active
Active
© 2017 Toshiba Electronic Devices & Storage Corporation
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2017-10-18
Electrical Characteristics
DC Characteristics (Ta = -40 to 85°C)
TCK2291xG
Characteristics
Quiescent current ( ON state)
Quiescent current ( OFF state)
Switch leakage current( OFF state)
Reverse blocking current Reverse blocking voltage threshold Reverse blocking release voltage threshold Under Voltage Lock Out (UVLO) rising threshold Under Voltage Lock Out (UVLO) falling threshold
On resistance
Output discharge on resi.