DatasheetsPDF.com

TCK22910G Dataheets PDF



Part Number TCK22910G
Manufacturers Toshiba
Logo Toshiba
Description Load Switch IC
Datasheet TCK22910G DatasheetTCK22910G Datasheet (PDF)

TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCK2291xG TCK2291xG 2A Load Switch IC with True Reverse Current Blocking The TCK2291xG series is Load Switch ICs for power management with True Reverse Current Blocking and Thermal Shutdown function featuring low switch on resistance, ultra low quiescent current, high output current and wide input voltage operation from 1.1 to 5.5 V. Switch ON resistance is only 31 mΩ at 5.0 V, -0.15 A load conditions and output current is available o.

  TCK22910G   TCK22910G



Document
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCK2291xG TCK2291xG 2A Load Switch IC with True Reverse Current Blocking The TCK2291xG series is Load Switch ICs for power management with True Reverse Current Blocking and Thermal Shutdown function featuring low switch on resistance, ultra low quiescent current, high output current and wide input voltage operation from 1.1 to 5.5 V. Switch ON resistance is only 31 mΩ at 5.0 V, -0.15 A load conditions and output current is available on 2.0 A. And these feature a slew rate control driver and output auto-discharge function. This device is available in 0.4 mm pitch ultra small package WCSP6E (0.8 mm x 1.2 mm, t: 0.55 mm).Thus this devices is ideal for portable applications that require high-density board assembly such as cellular phone. Feature  True Reverse Current Blocking  Thermal Shutdown function  Output auto-discharge (Option)  Under voltage lockout  Low ON resistance : RON = 31 mΩ (typ.) at VIN = 5.0 V, IOUT = -0.15 A RON = 40 mΩ (typ.) at VIN = 3.3 V, IOUT = -0.15 A RON = 70 mΩ (typ.) at VIN = 1.8 V, IOUT = -0.15 A RON = 141 mΩ (typ.) at VIN = 1.2 V, IOUT = -0.15 A  Low Quiescent Current: IQ = 11 μA (typ.) at IOUT = 0 mA  Low standby current: IQ(OFF) = 0.6 μA (typ.) at OFF state  Inrush current reduction circuitt  Pull down connection between Control and GND(Option)  Ultra small package : WCSP6E (0.8 mm x 1.2 mm, t: 0.55 mm) WCSP6E Weight: 1 mg (typ.) © 2017 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-06 2017-10-18 Function Table TCK2291xG Function Part number True Reverse current blocking Output auto-discharge TCK22910G TCK22911G TCK22912G TCK22913G Built in Built in Built in Built in N/A Built in N/A Built in Under voltage Thermal shut lock out down Built in Built in Built in Built in Built in Built in Built in Built in Control pin polarity Active Low Active Low Active High Active High Control pin pull down connection Built in Built in Device Marking 4S 3S 2S 1S © 2017 Toshiba Electronic Devices & Storage Corporation 2 2017-10-18 Absolute Maximum Ratings (Ta = 25°C) TCK2291xG Characteristics Symbol Rating Unit Input voltage Control voltage Output voltage Output current Power dissipation Operating temperature range Junction temeperature Storage temperature VIN VCT VOUT IOUT PD Topr Tj Tstg DC Pulse -0.3 to 6.0 -0.3 to 6.0 -0.3 to 6.0 2.0 3.0 (Note1) 800 (Note 2) −40 to 85 150 −55 to 150 V V V A A mW °C °C °C Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: 100 μs pulse, 2% duty cycle Note2: Rating at mounting on a board Glass epoxy board dimension : 40mm x 40mm (both sides of board), t=1.6mm Metal pattern ratio : a surface approximately 50%, the reverse side approximately 50% Through hole : diameter 0.5mm x 28) Operating conditions Characteristics Input voltage Output voltage Output current Control High-level input voltage Control Low-level input voltage Symbol Condition VIN VOUT IOUT VIH VIL 1.8 V ≤ VIN 1.2V < VIN ≤ 5.5 V 1.1V ≤VIN ≤1.2 V ― ― ― Min Max Unit 1.1 5.5 V ― VIN V ― 2.0 A 1.0 ― V 0.9 ― ― 0.4 V Pin Assignment(Top view) AB C 2 1 A1: VOUT B1: VOUT C1: GND A2: VIN B2: VIN C2: Control Top marking Lot trace code Device Marking Index VOUT © 2017 Toshiba Electronic Devices & Storage Corporation 3 2017-10-18 Block Diagram TCK2291xG V IN Control UVLO Reverse current blocking Q1 Thermal Shut down Slew Rate Control Driver Control Logic Pull Down * Output Discharge Operation logic table VOUT Q2 * GND *:Option Control “High” Control “Low” Output Q1 Discharge Q2 Reverse current blocking Output Q1 Discharge Q2 Reverse current blocking TCK22910G OFF ― TCK22911G OFF ON TCK22912G ON ― TCK22913G ON OFF Active Active Active Active ON ON OFF OFF ― OFF ― ON Active Active Active Active © 2017 Toshiba Electronic Devices & Storage Corporation 4 2017-10-18 Electrical Characteristics DC Characteristics (Ta = -40 to 85°C) TCK2291xG Characteristics Quiescent current ( ON state) Quiescent current ( OFF state) Switch leakage current( OFF state) Reverse blocking current Reverse blocking voltage threshold Reverse blocking release voltage threshold Under Voltage Lock Out (UVLO) rising threshold Under Voltage Lock Out (UVLO) falling threshold On resistance Output discharge on resi.


TCK22894G TCK22910G TCK22911G


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)