• State-of-the-Art BiCMOS Design
Significantly Reduces ICCZ
• ESD Protection Exceeds 2000 V Per
MIL-STD-883C, Method 3015; Exceeds
200 V Using Machine Model (C = 200 pF,
R = 0)
• High-Impedance State During Power Up
and Power Down
• 3-State True Outputs Drive Bus Lines or
Buffer-Memory Address Registers
• P-N-P Inputs Reduce DC Loading
• Package Options Include Plastic
Small-Outline (D) Packages and Standard
Plastic 300-mil DIPs (P)
WITH 3-STATE OUTPUTS
SCBS048B – MARCH 1990 – REVISED NOVEMBER 1993
D OR P PACKAGE
This dual buffer and line driver is designed specifically to improve both the performance and density of 3-state
memory address drivers, clock drivers, and bus-oriented receivers and transmitters.
The SN64BCT306 is characterized for operation from – 40°C to 85°C and 0°C to 70°C.
logic diagram (positive logic)
2A 1 2Y
† This symbol is in accordance with ANSI/IEEE Std 91-1984
and IEC Publication 617-12.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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Copyright © 1993, Texas Instruments Incorporated