SN64BCT29828B

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R= 0) High-Impedance State During Power Up and Power Down 3-State Outputs Drive Bus Lines or Buffer-Memory Address Registers P-N-P Inputs Reduce DC Loading Flow-Through Architecture Optimizes PCB Layout Package Options Include Plastic Small-Outline (DW) Packages and Standard Plastic 300-mil DIPs (NT) SN64BCT29828B 10ĆBIT BUFFER/DRIVER WITH 3ĆSTATE OUTPUTS SCBS478 − MAY 1993 − REVISED NOVEMBER 1993 DW OR NT PACKAGE (TOP VIEW) OE1 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 GND 1 2 3 4 5 6 7 8 9 10 11 12 24 VCC 23 Y1 22 Y2 21 Y3 20 Y4 19 Y5 18 Y6 17 Y7 16 Y8 15 Y9 14 Y10 13 OE2 description This 10-bit buffer/driver provides high-performance bus interface for wide data paths or buses carrying parity. The 3-state control gate is a 2-input AND gate with active-low inputs so that if either output-enable (OE1 or OE2) input is high, all ten outputs are in the high-impedance state. The outputs are also in the high-impedance state during power-up and power-down conditions. The outputs remain in the high-impedance state while the device is powered down. The SN64BCT29828B is characterized for operation from − 40°C to 85°C and 0°C to 70°C. FUNCTION TABLE INPUTS OE1 OE2 A OUTPUT Y LLL H L LH L HXX Z XHX Z PRODUCTION DATA information is current as of publication date. Products conform to specifications per the...