• State-of-the-Art BiCMOS Design
Significantly Reduces ICCZ
• ESD Protection Exceeds 2000 V Per
MIL-STD-883C, Method 3015; Exceeds
200 V Using Machine Model (C = 200 pF,
• High-Impedance State During Power Up
and Power Down
• 3-State Outputs Drive Bus Lines or
Buffer-Memory Address Registers
• P-N-P Inputs Reduce DC Loading
• Flow-Through Architecture Optimizes
• Package Options Include Plastic
Small-Outline (DW) Packages and Standard
Plastic 300-mil DIPs (NT)
WITH 3ĆSTATE OUTPUTS
SCBS478 − MAY 1993 − REVISED NOVEMBER 1993
DW OR NT PACKAGE
This 10-bit buffer/driver provides high-performance bus interface for wide data paths or buses carrying parity.
The 3-state control gate is a 2-input AND gate with active-low inputs so that if either output-enable (OE1 or OE2)
input is high, all ten outputs are in the high-impedance state. The outputs are also in the high-impedance state
during power-up and power-down conditions. The outputs remain in the high-impedance state while the device
is powered down.
The SN64BCT29828B is characterized for operation from − 40°C to 85°C and 0°C to 70°C.
OE1 OE2 A
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 1993, Texas Instruments Incorporated
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