2SB611 Datasheet: Silicon PNP Power Transistor





2SB611 Silicon PNP Power Transistor Datasheet

Part Number 2SB611
Description Silicon PNP Power Transistor
Manufacture INCHANGE
Total Page 2 Pages
PDF Download Download 2SB611 Datasheet PDF

Features: isc Silicon PNP Power Transistor INCHAN GE Semiconductor 2SB611 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -110V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(M ax.) @IC= -5A ·Wide area of safe opera tion ·Minimum Lot-to-Lot variations fo r robust device performance and reliabl e operation APPLICATIONS ·Designed for general-purpose switching and amplifie r applications ABSOLUTE MAXIMUM RATING S(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -15 0 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @Tc=25℃ TJ Junction Temperature -7 A 60 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHA NGE Semiconductor 2SB611 ELECTRICAL CH ARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustainin.

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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB611
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -110V(Min)
·Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max.) @IC= -5A
·Wide area of safe operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-110 V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current-Continuous
PC
Collector Power Dissipation
@Tc=25
TJ Junction Temperature
-7 A
60 W
150
Tstg Storage Temperature
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

     






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