2SD256 Datasheet: Silicon NPN Power Transistor





2SD256 Silicon NPN Power Transistor Datasheet

Part Number 2SD256
Description Silicon NPN Power Transistor
Manufacture INCHANGE
Total Page 2 Pages
PDF Download Download 2SD256 Datasheet PDF

Features: isc Silicon NPN Power Transistor INCHAN GE Semiconductor 2SD256 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR) CEO= 40V(Min) ·Collector Power D issipation- : PC= 25W @TC= 25℃ ·Mini mum Lot-to-Lot variations for robust de vice performance and reliable operation APPLICATIONS ·Designed for use in ge neral purpose amplifier and switching a pplications. ABSOLUTE MAXIMUM RATINGS( Ta=25℃) SYMBOL PARAMETER VALUE UN IT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6V IC Col lector Current-Continuous 4.0 A ICM C ollector Current-Peak 6.0 A IB Base C urrent 1.0 A PC Collector Power Dissi pation@TC=25℃ 25 W TJ Junction Temp erature 150 ℃ Tstg Storage Temperat ure -65~150 ℃ isc website:www.isc semi.com1 isc & iscsemi is registered trademark isc Silicon NPN Power Transi stor INCHANGE Semiconductor 2SD256 EL ECTRICAL CHARACTERISTICS TC=25℃ unles s otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter.

Keywords: 2SD256, datasheet, pdf, INCHANGE, Silicon, NPN, Power, Transistor, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD256
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 40V(Min)
·Collector Power Dissipation-
: PC= 25W @TC= 25
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60 V
VCEO
Collector-Emitter Voltage
40 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
4.0 A
ICM Collector Current-Peak
6.0 A
IB Base Current
1.0 A
PC Collector Power Dissipation@TC=2525
W
TJ Junction Temperature
150
Tstg Storage Temperature
-65~150
isc websitewww.iscsemi.com1
isc & iscsemi is registered trademark

     






Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)