isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
40N20
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate f...
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
40N20
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
·DESCRITION ·Power switching applications ·Hard switched and high frequency circuits ·Uninterruptible power supply
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
200
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
40
A
IDM
Drain Current-Single Plused
160
A
PD
Total Dissipation @TC=25℃
220
W
Tj
Max. Operating Junction Temperature -55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.47 ℃/W
isc website： www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
40N20
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
Gfs
Forward Transconductance
Ciss* Input capacitance
Coss* Output capacitance
Crss* Reverse transfer capacitance
td(on)* Turn-on delay time
Tr*
Rise time
td(off)* Turn-off delay time
Tf*
Fall time
Qg*
Total Gate Charge
Qgs* Ga...
