BUX98AP

BUX98AP HIGH POWER NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s NPN TRANSISTOR s HIGH VOLTAGE CAPABILITY s HIGH CURRENT CAPABILITY s FAST SWITCHING SPEED APPLICATIONS s HIGH FREQUENCY AND EFFICENCY CONVERTERS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BUX98AP is a silicon multiepitaxial mesa NPN transistor in jedec TO-218 plastic package, intended for use in industrial applications from single and three-phase mains operation. 3 2 1 TO-218 (SOT-93) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCER VCES VCEO VEBO IC ICM IB IBM Ptot Tstg Tj Parameter Collector-Emitter Voltage (RBE = ≤ 10 Ω) Collector-Base Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Power Dissipation at Tcase < 25 oC Storage Temperature Max Operating Junction Temperature June 1997 Value 1000 1000 450 7 24 36 5 8 200 -65 to 150 150 Unit V V V V A A A A W oC oC 1/4 BUX98AP THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.63 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICER Collector Cut-off Current (RBE = 10 Ω) VCE = VCES VCE = VCES TCASE = 125 oC ICES Collector Cut-off Current (VBE = 0 ) VCE = VCES VCE = VCES TCASE = 125 oC ICEO IEBO Collector Cut-off Current (IB = 0) Emitter Cut-off Current (IC = 0) VCE = VCEO VEB = 5 V VCEO(su...