BUX98AP

isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage Capability ·High Current Capability ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency and efficiency converters ·Linear and switching industrial equipment ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 24 A ICM Collector Current-peak ( tp <5 ms ) 36 A IB Base Current-Continuous 5 A IBM Base Current-peak ( tp <5 ms ) PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 8 A 200 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.63 ℃/W BUX98AP isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUX98AP ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ☆VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCER(SUS) Collector-Emitter Sustaining Voltage IC= 1mA ☆VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 16A ;IB= 3.2A ☆VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current ICEO Collector Cutoff Current IC= 16A ;IB= 3.2A VCB=1000V; IE= 0 VCB=1000V; IE= 0 TC=125℃ VCE= 450V; IB= 0 IEBO Emitter Cutoff Cur...