3DD68 Datasheet: NPN silicon low frequency high power transistor





3DD68 NPN silicon low frequency high power transistor Datasheet

Part Number 3DD68
Description NPN silicon low frequency high power transistor
Manufacture ETC
Total Page 1 Pages
PDF Download Download 3DD68 Datasheet PDF

Features: 3DD68/3DD69 NPN ABCDE F PCM TC=75℃ 100 W ICM Tjm Tstg Rth VCE=10V IC=3A 15 175 -55~150 1 A ℃ ℃ ℃/W V(BR)CBO ICB=10mA ≥30 50 ≥80 ≥110 ≥150 ≥200 V V(B R)CEO ICE=10mA ≥30 ≥50 ≥80 ≥ 110 ≥150 ≥200 V V(BR)EBO IEB=20mA ≥5.0 V ICBO VCB=20V ≤1.5 mA ICEO VCE=20V ≤3.0 mA IEBO VB Esat VCEsat VEB=4V IC=5A IB=1A ≤1.5 ≤2.0 ≤2.0 mA V VCE=10V hFE IC=5A 15~180 1. E 2. B 3. C B2 (F ) TO-254 :2N3772、BDY76、2N 1936、2N3238、2N6359、2N1937、BDY77 、2N6302、IR6302、 MJ6302、BDY37、 2N3240 .

Keywords: 3DD68, datasheet, pdf, ETC, NPN, silicon, low, frequency, high, power, transistor, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

3DD68/3DD69 NPN 硅低频大功率晶体管
参数符号
测试条件
规范值
单位
ABCDE F
PCM TC=75
100
W
ICM
Tjm
Tstg
Rth
VCE=10V
IC=3A
15
175
-55~150
1
A
/W
V(BR)CBO ICB=10mA
≥30
≥50
≥80 ≥110 ≥150 ≥200
V
V(BR)CEO ICE=10mA
≥30
≥50
≥80 ≥110 ≥150 ≥200
V
V(BR)EBO IEB=20mA
≥5.0
V
ICBO
VCB=20V
≤1.5
mA
ICEO
VCE=20V
≤3.0
mA
IEBO
VBEsat
VCEsat
VEB=4V
IC=5A
IB=1A
≤1.5
≤2.0
≤2.0
mA
V
VCE=10V
hFE
IC=5A
15~180
线 1. E 发射极
2. B 基 极
3. C 集电极
B2 系列(F 系列)
TO-254
替代型号:2N3772BDY762N19362N32382N63592N1937BDY772N6302IR6302
MJ6302BDY372N3240

  






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