isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4230
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: V...
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC4230
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V(Min) ·Fast Switching speed ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Electronic ballasts for fluorescent lighting ·Switch mode power supplies
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1200
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
4
A
IB
Base Current-Continuous
1
A
IBM
Base Current-Peak
PT
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
2
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case 2.5 ℃/W
isc Website:www.iscsemi.cn
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isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC4230
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
ICBO
Collector Cutoff Current
At rated Voltage
ICEO
Collector Cutoff Current
At rated Voltage
IEBO
Emitter Cutoff Current
At rated Voltage
hFE-1
DC Current Gain
I...