Programmable ROM
D Organization . . . 65 536 by 8 Bits
D Single 5-V Power Supply
D Pin Compatible With Existing 512K MOS
ROMs, PROMs, a...
Description
D Organization . . . 65 536 by 8 Bits
D Single 5-V Power Supply
D Pin Compatible With Existing 512K MOS
ROMs, PROMs, and EPROMs
D All Inputs/Outputs Fully TTL Compatible
D Max Access/Min Cycle Time
VCC ± 10% ’27C/PC512-10 ’27C/PC512-12 ’27C/PC512-15 ’27C/PC512-20 ’27C/PC512-25
100 ns 120 ns 150 ns 200 ns 250 ns
D Power Saving CMOS Technology
D Very High-Speed SNAP! Pulse
Programming
D 3-State Output Buffers
D 400-mV Minimum DC Noise Immunity With
Standard TTL Loads
D Latchup Immunity of 250 mA on All Input
and Output Lines
D Low Power Dissipation ( VCC = 5.25 V )
− Active . . . 158 mW Worst Case
− Standby . . . 1.4 mW Worst Case
(CMOS Input Levels)
D Temperature Range Options
D 512K EPROM Available With MIL-STD-883C
Class B High Reliability Processing
(SMJ27C512)
description
The TMS27C512 series are 65 536 by 8-bit (524 288-bit), ultraviolet (UV) light erasable, electrically programmable read-only memories (EPROMs).
The TMS27PC512 series are 65 536 by 8-bit (524 288-bit), one-time programmable (OTP) electrically programmable read-only memories (PROMs).
TMS27C512 65536 BY 8ĆBIT UV ERASABLE TMS27PC512 65536 BY 8ĆBIT
PROGRAMMABLE READĆONLY MEMORIES SMLS512G − NOVEMBER 1985 − REVISED SEPTEMBER 1997
J PACKAGE ( TOP VIEW )
A15 A12
A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 VCC 27 A14 26 A13 25 A8 24 A9 23 A11 22 G / VPP 21 A10 20 E 19 DQ7 18 DQ6 17 DQ5 16 DQ4 15 DQ3
FM PACKAGE ( TOP VIEW )
A7 A12 A15 NU VCC A14 A13
A6 A5 A4 A3 ...
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