TMS28F020

D Organization . . . 262144 by 8-Bits D Pin Compatible With Existing 2-Megabit EPROMs D VCC Tolerance ±10% D All Inputs/Outputs TTL Compatible D Maximum Access/Minimum Cycle Time ’28F020-10 100 ns ’28F020-12 120 ns ’28F020-15 150 ns ’28F020-17 170 ns D Industry-Standard Programming Algorithm D 100000 and 10 000 Program / Erase-Cycle Versions Available D Latchup Immunity of 250 mA on All Input and Output Lines D Low Power Dissipation (VCC = 5.5 V) – Active Write . . . 55 mW – Active Read . . . 165 mW – Electrical Erase . . . 82.5 mW – Standby . . . 0.55 mW (CMOS-Input Levels) D Automotive Temperature Range – 40°C to 125°C description The TMS28F020 flash memory is a 262 144 by 8-bit (2 097 152-bit), programmable read-only memory that can be electrically bulk-erased and reprogrammed. It is available in 100 000 and 10 000 program/erase-endurance-cycle versions. The TMS28F020 is offered in a 32-lead plastic leaded chip-carrier package using 1,25-mm (50-mil) lead spacing (FM suffix) and a 32-lead thin small-outline package (DD suffix). TMS28F020 262144 BY 8-BIT FLASH MEMORY SMJS020C – OCTOBER 1994 – REVISED JANUARY 1998 FM PACKAGE ( TOP VIEW ) A12 A15 A16 VPP VCC W A17 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 4 3 2 1 32 31 30 5 29 6 28 7 27 8 26 9 25 10 24 11 23 12 22 13 21 14 15 16 17 18 19 20 A14 A13 A8 A9 A11 G A10 E DQ7 DQ1 DQ2 VSS DQ3 DQ4 DQ5 DQ6 PIN NOMENCLATURE A0 – A17 DQ0 – DQ7 E G VCC VPP VSS W Address Inputs Inputs (programming) / Outputs Chip Enable...