TMS28F020 Datasheet: 262144 BY 8-BIT FLASH MEMORY





TMS28F020 Datasheet PDF

Part Number TMS28F020
Description 262144 BY 8-BIT FLASH MEMORY
Manufacture etcTI
Total Page 21 Pages
PDF Download Download TMS28F020 Datasheet PDF

Features: D Organization . . . 262144 by 8-Bits D Pin Compatible With Existing 2-Megabit EPROMs D VCC Tolerance ±10% D All I nputs/Outputs TTL Compatible D Maximum Access/Minimum Cycle Time ’28F020-1 0 100 ns ’28F020-12 120 ns ’28F 020-15 150 ns ’28F020-17 170 ns D Industry-Standard Programming Algorith m D 100000 and 10 000 Program / Erase- Cycle Versions Available D Latchup Im munity of 250 mA on All Input and Outp ut Lines D Low Power Dissipation (VCC = 5.5 V) – Active Write . . . 55 mW – Active Read . . . 165 mW – Elect rical Erase . . . 82.5 mW – Standby . . . 0.55 mW (CMOS-Input Levels) D A utomotive Temperature Range – 40°C to 125°C description The TMS28F020 fl ash memory is a 262 144 by 8-bit (2 097 152-bit), programmable read-only memor y that can be electrically bulk-erased and reprogrammed. It is available in 10 0 000 and 10 000 program/erase-enduranc e-cycle versions. The TMS28F020 is offe red in a 32-lead plastic leaded chip-carrier package using 1,25-mm (50-mil) lead spa.

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TMS28F020 datasheet
D Organization . . . 262144 by 8-Bits
D Pin Compatible With Existing 2-Megabit
EPROMs
D VCC Tolerance ±10%
D All Inputs/Outputs TTL Compatible
D Maximum Access/Minimum Cycle Time
’28F020-10
100 ns
’28F020-12
120 ns
’28F020-15
150 ns
’28F020-17
170 ns
D Industry-Standard Programming Algorithm
D 100000 and 10 000 Program / Erase-Cycle
Versions Available
D Latchup Immunity of 250 mA on All Input
and Output Lines
D Low Power Dissipation (VCC = 5.5 V)
– Active Write . . . 55 mW
– Active Read . . . 165 mW
– Electrical Erase . . . 82.5 mW
– Standby . . . 0.55 mW
(CMOS-Input Levels)
D Automotive Temperature Range
– 40°C to 125°C
description
The TMS28F020 flash memory is a 262 144 by
8-bit (2 097 152-bit), programmable read-only
memory that can be electrically bulk-erased and
reprogrammed. It is available in 100 000 and
10 000 program/erase-endurance-cycle versions.
The TMS28F020 is offered in a 32-lead plastic
leaded chip-carrier package using 1,25-mm
(50-mil) lead spacing (FM suffix) and a 32-lead
thin small-outline package (DD suffix).
TMS28F020
262144 BY 8-BIT
FLASH MEMORY
SMJS020C – OCTOBER 1994 – REVISED JANUARY 1998
FM PACKAGE
( TOP VIEW )
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
4 3 2 1 32 31 30
5 29
6 28
7 27
8 26
9 25
10 24
11 23
12 22
13 21
14 15 16 17 18 19 20
A14
A13
A8
A9
A11
G
A10
E
DQ7
PIN NOMENCLATURE
A0 – A17
DQ0 – DQ7
E
G
VCC
VPP
VSS
W
Address Inputs
Inputs (programming) / Outputs
Chip Enable
Output Enable
5-V Power Supply
12-V Power Supply
Ground
Write Enable
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1998, Texas Instruments Incorporated
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
1

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