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TMS29F002T Dataheets PDF



Part Number TMS29F002T
Manufacturers Texas Instruments
Logo Texas Instruments
Description 262144 BY 8-BIT FLASH MEMORIES
Datasheet TMS29F002T DatasheetTMS29F002T Datasheet (PDF)

PRODUCT PREVIEW "D Single Power Supply Supports 5-V 10% Read/Write Operation D Organization: . . . 262144 By 8 Bits D Array-Blocking Architecture – One 16K-Byte Protected-Boot Sector – Two 8K-Byte Parameter-Sectors – One 32K-Byte Sector – Three 64K-Byte Sectors – Any Combination of Sectors Can Be Erased. Supports Full-Chip Erase – Any Combination of Sectors Can Be Marked as Read-Only D Boot-Code Sector Architecture – T = Top Sector – B = Bottom Sector D Sector Protection – Hardware Protection M.

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PRODUCT PREVIEW "D Single Power Supply Supports 5-V 10% Read/Write Operation D Organization: . . . 262144 By 8 Bits D Array-Blocking Architecture – One 16K-Byte Protected-Boot Sector – Two 8K-Byte Parameter-Sectors – One 32K-Byte Sector – Three 64K-Byte Sectors – Any Combination of Sectors Can Be Erased. Supports Full-Chip Erase – Any Combination of Sectors Can Be Marked as Read-Only D Boot-Code Sector Architecture – T = Top Sector – B = Bottom Sector D Sector Protection – Hardware Protection Method That Disables Any Combination of Sectors From Write or Erase Operations Using Standard Programming Equipment D Embedded Program/Erase Algorithms – Automatically Pre-Programs and Erases Any Sector – Automatically Programs and Verifies the Program Data at Specified Address D JEDEC Standards – Compatible With JEDEC Byte Pinouts – Compatible With JEDEC EEPROM Command Set D Fully Automated On-Chip Erase and Program Operations TMS29F002T, TMS29F002B 262144 BY 8-BIT FLASH MEMORIES SMJS848 – AUGUST 1997 D 100 000 Program/Erase Cycles D Low Power Dissipation D Low Current Consumption – 40-mA Typical Active Read – 60-mA Typical Program/Erase Current – Less Than 100-µA Standby Current D All Inputs/Outputs TTL-Compatible D Erase Suspend/Resume – Supports Reading Data From, or Programming Data to, a Sector Not Being Erased D 40-Pin Thin Small Outline Package (TSOP) (DCD Suffix) D Detection Of Program/Erase Operation – Data Polling and Toggle Bit Feature of Program/Erase Cycle Completion "D High-Speed Data Access at 5-V VCC 10% – 70 Commercial . . . 0°C to 70°C – 80 Extended . . . –40°C to 85°C A0 – A17 DQ0 – DQ7 CE OE NC VCC VSS WE PIN NOMENCLATURE Address Inputs Data In / Data out Chip Enable Output Enable No Internal Connection Power Supply Ground Write Enable description The TMS29F002T/B is a 262 144 by 8-bit (2 097 152-bit), 5-V single-supply, programmable read-only memory device that can be electrically erased and reprogrammed. This device is organized as 262 144 x 8 bits, divided into seven sectors: – One 16K-byte protected-boot sector – Two 8K-byte sectors – One 32K-byte sector – Three 64K-byte sectors Any combination of sectors can be marked as read-only or erased. Full chip erasure is also supported. Sector data protection is afforded by methods that can disable any combination of sectors from write or read operations using standard programming equipment. An on-chip state machine provides an on-board algorithm that automatically pre-programs and erases any sector before it automatically programs and verifies program data at any specified address. The command set is compatible with that of the Joint Electronic Device EnginePelerainseg bCeoauwnacreil t(hJaEt DanEiCm)posrttaanntdnaortdicse aconndceisrnicngomavpaailtaibbilleity,wsittahndtahred wJEarDraEntCy, 2anMd-busyeteineclreitcictarilcaapllpyliceartaiosnas bolfe prograTmexmasaIbnsletrurmeaendt-sosnelmyicmonedmucotoryr p(rEodEuPctRs aOnMd d)isccolamimmerasnthderseetot.aAppseaursspaet nthde/erendsuomf .


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