UNISONIC TECHNOLOGIES CO., LTD
BD135
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
NPN EPITAXIAL TRANSISTOR
DESCRI...
UNISONIC TECHNOLOGIES CO., LTD
BD135
Preliminary
NPN EPITAXIAL SILICON
TRANSISTOR
NPN EPITAXIAL
TRANSISTOR
DESCRIPTION
The UTC BD135 is an
NPN epitaxial
transistor; it uses UTC’s advanced technology to provide the customers with high DC current gain, etc.
FEATURES
* high DC current gain
ORDERING INFORMATION
Ordering Number
BD135G-xx-AA3-R Note: Pin Assignment: B: Base C: Collector
Package
SOT-223 E: Emitter
Pin Assignment 123 BCE
Packing Tape Reel
BD135G-xx-AA3-R
(1)Packing Type (2)Package Type (3)Rank (4)Green Package
(1) R: Tape Reel, K: Bulk (2) AA3: SOT-223, T60: TO-126 (3) refer to CLASSIFICATION OF hFE3 (4) G: Halogen Free and Lead Free, L: Lead Free
MARKING
www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd
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QW-R221-037.a
BD135
Preliminary
NPN EPITAXIAL SILICON
TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
45
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
5
V
Collector Current (DC)
IC 1.5 A
Collector Current (Pulse)
ICP 3.0 A
Base Current
IB 0.5 A
Collector Power Dissipation
PC 12.5 W
Junction Temperature
TJ 150 °C
Storage Temperature
TSTG
-55 ~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC =25°C unl...