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1JH46

Toshiba Semiconductor

FAST RECOVERY (SWITCHING TYPE POWER SUPPLY APPLICATIONS)

1JH46 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1JH46 SWITCHING MODE POWER SUPPLY APPLICATIONS z Repetitive...


Toshiba Semiconductor

1JH46

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1JH46 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1JH46 SWITCHING MODE POWER SUPPLY APPLICATIONS z Repetitive Peak Reverse Voltage z Average Forward Current : VRRM = 600V : IF (AV) = 1.0A z Very Fast Reverse−Recovery Time : trr = 200ns (Max) Unit: mm ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Reverse Voltage Average Forward Current (Ta = 25°C) Peak One Cycle Surge Forward Current (Non−Repetitive) Junction Temperature Range Storage Temperature Range SYMBOL VRRM IF (AV) IFSM Tj Tstg RATING 600 1.0 15 (50Hz) 17 (60Hz) −40~150 −40~150 UNIT V A A °C °C Note: Using continuously under heavy loads (e.g. the application of high JEDEC ― temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA ― reliability significantly even if the operating conditions (i.e. TOSHIBA 3-3F2A operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 0.18 g (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Peak Forward Voltage Repetitive Peak Reverse Current Reverse Recovery Time Forward Recovery Time Thermal Resistance SYMBOL VFM IRRM trr tfr Rth (j−a) TEST CONDITION IFM = 1.0A VRRM = 600V IF = 1A, di / d...




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