TMS44400P Datasheet: DYNAMIC RANDOM-ACCESS MEMORIES





TMS44400P DYNAMIC RANDOM-ACCESS MEMORIES Datasheet

Part Number TMS44400P
Description DYNAMIC RANDOM-ACCESS MEMORIES
Manufacture etcTI
Total Page 25 Pages
PDF Download Download TMS44400P Datasheet PDF

Features: ADVANCE INFORMATION TMS44400, TMS44400P , TMS46400, TMS46400P 1048576-WORD BY 4 -BIT DYNAMIC RANDOM-ACCESS MEMORIES SMH S562C – MAY 1995 – REVISED NOVEMBER 1996 D Organization . . . 1 048576 × 4 D Single 5-V Power Supply for TMS444 00 / P (± 10% Tolerance) D Single 3.3- V Power Supply for TMS46400 / P (± 10% Tolerance) D Low Power Dissipation ( T MS46400P only) 200-µA CMOS Standby 200 -µA Self Refresh 300-µA Extended-Refr esh Battery Backup D Performance Ranges : ACCESS ACCESS ACCESS READ TIME TIME TIME OR WRITE (tRAC) (tCAC) (tAA) CYCLE (MAX) (MAX) (MAX) (MIN) ’4x400/P-60 60 ns 15 ns 30 ns 110 ns ’4x400/P- 70 70 ns 18 ns 35 ns 130 ns ’4x400/ P-80 80 ns 20 ns 40 ns 150 ns D Enhan ced Page-Mode Operation for Faster Mem ory Access D CAS-Before-RAS ( CBR) Ref resh D Long Refresh Period 1024-Cycle Refresh in 16 ms 128 ms (MAX) for Low -Power, Self-Refresh Version ( TMS4x40 0P) D 3-State Unlatched Output D Texa s Instruments EPIC™ CMOS Process DGA PACKAGE ( TOP VIEW ) DJ PACKAGE ( TOP VI.

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TMS44400, TMS44400P, TMS46400, TMS46400P
1048576-WORD BY 4-BIT
DYNAMIC RANDOM-ACCESS MEMORIES
SMHS562C – MAY 1995 – REVISED NOVEMBER 1996
D Organization . . . 1 048576 × 4
D Single 5-V Power Supply for TMS44400 / P
(± 10% Tolerance)
D Single 3.3-V Power Supply for TMS46400 / P
(± 10% Tolerance)
D Low Power Dissipation ( TMS46400P only)
200-µA CMOS Standby
200-µA Self Refresh
300-µA Extended-Refresh Battery
Backup
D Performance Ranges:
ACCESS ACCESS ACCESS READ
TIME TIME TIME OR WRITE
(tRAC) (tCAC) (tAA) CYCLE
(MAX) (MAX) (MAX) (MIN)
’4x400/P-60
60 ns 15 ns 30 ns 110 ns
’4x400/P-70
70 ns 18 ns 35 ns 130 ns
’4x400/P-80
80 ns 20 ns 40 ns 150 ns
D Enhanced Page-Mode Operation for Faster
Memory Access
D CAS-Before-RAS ( CBR) Refresh
D Long Refresh Period
1024-Cycle Refresh in 16 ms
128 ms (MAX) for Low-Power,
Self-Refresh Version ( TMS4x400P)
D 3-State Unlatched Output
D Texas Instruments EPICCMOS Process
DGA PACKAGE
( TOP VIEW )
DJ PACKAGE
( TOP VIEW )
DQ1
DQ2
W
RAS
A9
1
2
3
4
5
26 VSS DQ1 1
25 DQ4 DQ2 2
24 DQ3
W3
23 CAS RAS 4
22 OE
A9 5
26 VSS
25 DQ4
24 DQ3
23 CAS
22 OE
A0
A1
A2
A3
VCC
9
10
11
12
13
18 A8
17 A7
16 A6
15 A5
14 A4
A0
A1
A2
A3
VCC
9
10
11
12
13
18 A8
17 A7
16 A6
15 A5
14 A4
PIN NOMENCLATURE
A0 – A9
CAS
DQ1 – DQ4
OE
RAS
VCC
VSS
W
Address Inputs
Column-Address Strobe
Data In
Output Enable
Row-Address Strobe
5-V or 3.3-V Supply
Ground
Write Enable
D Operating Free-Air Temperature Range
0°C to 70°C
description
AVAILABLE OPTIONS
The TMS4x400 series is a set of high-speed,
4 194 304-bit dynamic random-access memories
(DRAMs), organized as 1 048 576 words of four
bits each. The TMS4x400P series is a set of
high-speed, low-power, self-refresh with
extended-refresh, 4 194 304-bit DRAMs,
organized as 1 048 576 words of four bits each.
DEVICE
TMS44400
TMS44400P
TMS46400
POWER
SUPPLY
5V
5V
3.3 V
SELF-REFRESH
BATTERY
BACKUP
REFRESH
CYCLES
— 1024 in 16 ms
Yes 1024 in 128 ms
— 1024 in 16 ms
Both series employ state-of-the-art enhanced
TMS46400P 3.3 V
Yes 1024 in 128 ms
performance implanted CMOS (EPIC)
technology for high performance, reliability, and
low power.
These devices feature maximum RAS access times of 60 ns, 70 ns, and 80 ns. All addresses and data-in lines
are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility.
The TMS4x400 and TMS4x400P are offered in a 20 / 26-lead plastic small-outline ( TSOP) package ( DGA suffix)
and a 300-mil 20 / 26-lead plastic surface-mount SOJ package ( DJ suffix). Both packages are characterized for
operation from 0°C to 70°C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
EPIC is a trademark of Texas Instruments Incorporated.
ADVANCE INFORMATION concerns new products in the sampling or
preproduction phase of development. Characteristic data and other
specifications are subject to change without notice.
Copyright © 1996, Texas Instruments Incorporated
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
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