TMS46400

ADVANCE INFORMATION TMS44400, TMS44400P, TMS46400, TMS46400P 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES SMHS562C – MAY 1995 – REVISED NOVEMBER 1996 D Organization . . . 1 048576 × 4 D Single 5-V Power Supply for TMS44400 / P (± 10% Tolerance) D Single 3.3-V Power Supply for TMS46400 / P (± 10% Tolerance) D Low Power Dissipation ( TMS46400P only) 200-µA CMOS Standby 200-µA Self Refresh 300-µA Extended-Refresh Battery Backup D Performance Ranges: ACCESS ACCESS ACCESS READ TIME TIME TIME OR WRITE (tRAC) (tCAC) (tAA) CYCLE (MAX) (MAX) (MAX) (MIN) ’4x400/P-60 60 ns 15 ns 30 ns 110 ns ’4x400/P-70 70 ns 18 ns 35 ns 130 ns ’4x400/P-80 80 ns 20 ns 40 ns 150 ns D Enhanced Page-Mode Operation for Faster Memory Access D CAS-Before-RAS ( CBR) Refresh D Long Refresh Period 1024-Cycle Refresh in 16 ms 128 ms (MAX) for Low-Power, Self-Refresh Version ( TMS4x400P) D 3-State Unlatched Output D Texas Instruments EPIC™ CMOS Process DGA PACKAGE ( TOP VIEW ) DJ PACKAGE ( TOP VIEW ) DQ1 DQ2 W RAS A9 1 2 3 4 5 26 VSS DQ1 1 25 DQ4 DQ2 2 24 DQ3 W3 23 CAS RAS 4 22 OE A9 5 26 VSS 25 DQ4 24 DQ3 23 CAS 22 OE A0 A1 A2 A3 VCC 9 10 11 12 13 18 A8 17 A7 16 A6 15 A5 14 A4 A0 A1 A2 A3 VCC 9 10 11 12 13 18 A8 17 A7 16 A6 15 A5 14 A4 PIN NOMENCLATURE A0 – A9 CAS DQ1 – DQ4 OE RAS VCC VSS W Address Inputs Column-Address Strobe Data In Output Enable Row-Address Strobe 5-V or 3.3-V Supply Ground Write Enable D Operating Free-Air Temperature Range 0°C to 70°C descripti...