PNZ154 Datasheet PDF Download, Panasonic





(PDF) PNZ154 Datasheet Download

Part Number PNZ154
Description Silicon planar type Phototransistors
Manufacture Panasonic
Total Page 4 Pages
PDF Download Download PNZ154 Datasheet PDF

Features: (planed maintMeaniantnecneatnycpee/,Dims aciontnteinnaunecdeitnyclpue,deplsafnol leodwdiinsgc foontiurnuPreoddtyucptelid f,edciysccloentsitnaugee.dDisMcaionntti ennuaendtype)ce/ Phototransistors Thi s product complies with the RoHS Direct ive (EU 2002/95/EC). PNZ154 (PN154) Si licon planar type For optical control systems  Features  High sensitiv ity  Fast response: tr = 4 μs (typ. )  Wide spectral sensitivity charact eristics, suited for detecting various kinds of LEDs  Small size, thin side -view type package  Absolute Maximu m Ratings Ta = 25°C Parameter Symbol Rating Collector-emitter voltage (Ba se open) Emitter-collector voltage (Bas e open) Collector current Collector pow er dissipation Operating ambient temper ature Storage temperature VCEO VECO IC PC Topr Tstg 20 5 20 100 –25 to +85 –30 to +100 Unit V V mA mW °C °C  Electrical-Optical Characteristics Ta = 25°C±3°C Parameter Symbol C onditions Min Typ Max Photocurrent *1 IL VCE = 10 V, L = 500 lx 1.0 Collector-emitt.

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Phototransistors
This product complies with the RoHS Directive (EU 2002/95/EC).
PNZ154 (PN154)
Silicon planar type
For optical control systems
Features
High sensitivity
Fast response: tr = 4 μs (typ.)
Wide spectral sensitivity characteristics, suited for detecting various kinds of LEDs
Small size, thin side-view type package
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Collector-emitter voltage (Base open)
Emitter-collector voltage (Base open)
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
VCEO
VECO
IC
PC
Topr
Tstg
20
5
20
100
–25 to +85
–30 to +100
Unit
V
V
mA
mW
°C
°C
Electrical-Optical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Photocurrent *1
IL VCE = 10 V, L = 500 lx
1.0
Collector-emitter cutoff current (Base open)
Collector-emitter saturation voltage *1
ICEO
VCE(sat)
VCE = 10 V
IL = 1 mA, L = 1000 lx
0.01 0.2
0.2 0.5
Peak emission wavelength
λP VCE = 10 V
800
Half-power angle
θ The angle when the photocurrent is halved
27
Rise time *2
Fall time *2
tr
tf
VCC = 10 V, IL = 5 mA, RL = 100 W
4 10
4 10
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed by disregarding radiation.
4. *1: Source: Tungsten lamp (color temperature 2 856K)
*2: Switching time measurement circuit
Sig. in
50
VCC
(Input pulse)
Sig. out
RL
(Output pulse)
tr
90%
10%
tf
tr : Rise time
tf : Fall time
Unit
mA
mA
V
nm
°
µs
µs
Publication date: January 2009
Note) The part number in the parenthesis shows conventional part number.
SHE00020DED
1

           






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