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Photo
transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
PNZ154 (PN154)
Silicon planar type
For optical control systems
Features
High sensitivity Fast response: tr = 4 μs (typ.) Wide spectral sensitivity characteristics, suited for detecting various kinds of LEDs Small size, thin side-view type package
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Collector-emitter voltage (Base open) Emitter-collector voltage (Base open) Collector current Collector power dissipation Operating ambient temperature Storage temperature
VCEO VECO
IC PC Topr Tstg
20 5 20 100 –25 to +85 –30 to +100
Unit V V mA mW °C °C
Electrical-Optical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Photocurrent *1
IL VCE = 10 V, L = 500 lx
1.0
Collector-emitter cutoff current (Base open) Collector-emitter saturation voltage *1
ICEO VCE(sat)
VCE = 10 V IL = 1 mA, L = 1000 lx
0.01 0.2 0.2 0.5
Peak emission wavelength
λP VCE = 10 V
800
Half-power angle
θ The angle when the photocurrent is halved
27
Rise time *2 Fall time *2
tr tf
VCC = 10 V, IL = 5 mA, RL = 100 W
4 10 4 10
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for
transistors.
2. Spectral sensitivity characteristics: Sensitivity...