PN154

(planed maintMeaniantnecneatnycpee/,Dimsaciontnteinnaunecdeitnyclpue,deplsafnolleodwdiinsgc foontiurnuPreoddtyucptelidf,edciysccloentsitnaugee.dDisMcaionnttiennuaendtype)ce/ Phototransistors This product complies with the RoHS Directive (EU 2002/95/EC). PNZ154 (PN154) Silicon planar type For optical control systems  Features  High sensitivity  Fast response: tr = 4 μs (typ.)  Wide spectral sensitivity characteristics, suited for detecting various kinds of LEDs  Small size, thin side-view type package  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector-emitter voltage (Base open) Emitter-collector voltage (Base open) Collector current Collector power dissipation Operating ambient temperature Storage temperature VCEO VECO IC PC Topr Tstg 20 5 20 100 –25 to +85 –30 to +100 Unit V V mA mW °C °C  Electrical-Optical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Photocurrent *1 IL VCE = 10 V, L = 500 lx 1.0 Collector-emitter cutoff current (Base open) Collector-emitter saturation voltage *1 ICEO VCE(sat) VCE = 10 V IL = 1 mA, L = 1000 lx 0.01 0.2 0.2 0.5 Peak emission wavelength λP VCE = 10 V 800 Half-power angle θ The angle when the photocurrent is halved 27 Rise time *2 Fall time *2 tr tf VCC = 10 V, IL = 5 mA, RL = 100 W 4 10 4 10 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Spectral sensitivity characteristics: Sensitivity...