TPN3R704PL Datasheet PDF Download, Toshiba





(PDF) TPN3R704PL Datasheet PDF Download

Part Number TPN3R704PL
Description Silicon N-channel MOSFET
Manufacture Toshiba
Total Page 10 Pages
PDF Download Download TPN3R704PL Datasheet PDF

Features: MOSFETs Silicon N-channel MOS (U-MOS- H) TPN3R704PL 1. Applications • High- Efficiency DC-DC Converters • Switchi ng Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching ( 2) Small gate charge: QSW = 8.1 nC (typ .) (3) Small output charge: Qoss = 20.2 nC (typ.) (4) Low drain-source on-resi stance: RDS(ON) = 3.0 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancem ent mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Intern al Circuit TPN3R704PL TSON Advance 1 , 2, 3: Source 4: Gate 5, 6, 7, 8: Drai n ©2015 Toshiba Corporation 1 Start of commercial production 2015-10 2016- 10-03 Rev.2.0 TPN3R704PL 4. Absolute Maximum Ratings (Note) (Ta = 25  unl ess otherwise specified) Characteristi cs Symbol Rating Unit Drain-source voltage VDSS 40 V Gate-source voltage VGSS ±20 Drain current (DC) (Tc = 25 ) (Note 1), (Note 2) ID 80 A Drain current (DC) (Silicon limit) (Note 1), (Note 2) ID 92 A Drain current .

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MOSFETs Silicon N-channel MOS (U-MOS-H)
TPN3R704PL
1. Applications
• High-Efficiency DC-DC Converters
• Switching Voltage Regulators
• Motor Drivers
2. Features
(1) High-speed switching
(2) Small gate charge: QSW = 8.1 nC (typ.)
(3) Small output charge: Qoss = 20.2 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 3.0 m(typ.) (VGS = 10 V)
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
(6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.2 mA)
3. Packaging and Internal Circuit
TPN3R704PL
TSON Advance
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
©2015 Toshiba Corporation
1
Start of commercial production
2015-10
2016-10-03
Rev.2.0

                    
        






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