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TPN3R704PL Dataheets PDF



Part Number TPN3R704PL
Manufacturers Toshiba
Logo Toshiba
Description Silicon N-channel MOSFET
Datasheet TPN3R704PL DatasheetTPN3R704PL Datasheet (PDF)

MOSFETs Silicon N-channel MOS (U-MOS-H) TPN3R704PL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 8.1 nC (typ.) (3) Small output charge: Qoss = 20.2 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.0 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal .

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MOSFETs Silicon N-channel MOS (U-MOS-H) TPN3R704PL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 8.1 nC (typ.) (3) Small output charge: Qoss = 20.2 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.0 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TPN3R704PL TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2015 Toshiba Corporation 1 Start of commercial production 2015-10 2016-10-03 Rev.2.0 TPN3R704PL 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 40 V Gate-source voltage VGSS ±20 Drain current (DC) (Tc = 25 ) (Note 1), (Note 2) ID 80 A Drain current (DC) (Silicon limit) (Note 1), (Note 2) ID 92 A Drain current (pulsed) (t = 100 µs) (Note 1) IDP 200 A Power dissipation (Tc = 25 ) PD 86 W Power dissipation (Note 3) PD 2.67 W Power dissipation (Note 4) PD 0.63 W Single-pulse avalanche energy (Note 5) EAS 10 mJ Single-pulse avalanche current (Note 5) IAS 80 A Channel temperature Tch 175  Storage temperature Tstg -55 to 175  Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance (Tc = 25 ) Channel-to-ambient thermal resistance (Ta = 25 ) (Note 3) Channel-to-ambient thermal resistance (Ta = 25 ) (Note 4) Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: Limited by package limit. Silicon chip capability is 92 A. (Tc = 25 ) Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 5: VDD = 32 V, Tch = 25  (initial), L = 1.3 µH, IAS = 80 A Symbol Rth(ch-c) Rth(ch-a) Rth(ch-a) Max Unit 1.73 /W 56 235 Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a) Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. ©2015 Toshiba Corporation 2 2016-10-03 Rev.2.0 TPN3R704PL 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25  unless otherwise specified) Characteristics Gate leakage current Drain cut-off current Drain-source .


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