Document
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPN3R704PL
1. Applications
• High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers
2. Features
(1) High-speed switching (2) Small gate charge: QSW = 8.1 nC (typ.) (3) Small output charge: Qoss = 20.2 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.0 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.2 mA)
3. Packaging and Internal Circuit
TPN3R704PL
TSON Advance
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
©2015 Toshiba Corporation
1
Start of commercial production
2015-10
2016-10-03 Rev.2.0
TPN3R704PL
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 40 V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Tc = 25 ) (Note 1), (Note 2)
ID
80 A
Drain current (DC)
(Silicon limit) (Note 1), (Note 2)
ID
92 A
Drain current (pulsed)
(t = 100 µs)
(Note 1)
IDP
200 A
Power dissipation
(Tc = 25 )
PD 86 W
Power dissipation
(Note 3)
PD
2.67 W
Power dissipation
(Note 4)
PD
0.63 W
Single-pulse avalanche energy
(Note 5)
EAS
10 mJ
Single-pulse avalanche current
(Note 5)
IAS
80 A
Channel temperature
Tch 175
Storage temperature
Tstg
-55 to 175
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
(Tc = 25 )
Channel-to-ambient thermal resistance
(Ta = 25 )
(Note 3)
Channel-to-ambient thermal resistance
(Ta = 25 )
(Note 4)
Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: Limited by package limit. Silicon chip capability is 92 A. (Tc = 25 ) Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 5: VDD = 32 V, Tch = 25 (initial), L = 1.3 µH, IAS = 80 A
Symbol
Rth(ch-c) Rth(ch-a) Rth(ch-a)
Max Unit
1.73 /W 56 235
Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a)
Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
©2015 Toshiba Corporation
2
2016-10-03 Rev.2.0
TPN3R704PL
6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics Gate leakage current Drain cut-off current Drain-source .